A new composite gate structure IEGT device design

HAN Jian; CHEN Bin; GU Yue-ji

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A new composite gate structure IEGT device design

更新时间：2026-09-04

- A new composite gate structure IEGT device design
- Vol. 36, Issue 9, Pages: 99-102(2019)
- 作者机构：
  
  杭州士兰集昕微电子有限公司,浙江,杭州,310018
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2019
- 稿件说明：
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韩健, 陈斌, 顾悦吉. 一种复合栅结构IEGT器件设计[J]. 微电子学与计算机, 2019, 36(9): 99-102, 108.

HAN Jian, CHEN Bin, GU Yue-ji. A new composite gate structure IEGT device design[J]. 2019, 36(9): 99-102.
韩健, 陈斌, 顾悦吉. 一种复合栅结构IEGT器件设计[J]. 微电子学与计算机, 2019, 36(9): 99-102, 108. DOI：

HAN Jian, CHEN Bin, GU Yue-ji. A new composite gate structure IEGT device design[J]. 2019, 36(9): 99-102. DOI：

摘要

在传统平面栅IEGT器件基础上

设计了一种复合栅结构IEGT器件

器件兼容了电子注入增强和载流子存储层技术.器件纵向延展的沟槽栅增加器件有效栅极长度而不额外增加栅极面积

提高N-漂移区内部的载流子浓度.沟槽的存在能够减小P型基区侧面的电场强度

改善由于N型阻挡层浓度过高造成的器件耐压的跌落

从而进一步提高表面载流子浓度

最终降低器件饱和压降.器件具有两种不同厚度的栅氧化层

靠近P型基区采用薄栅氧化层以保持器件正常的阈值电压

其余大部分栅极区域采用厚栅氧化层以降低器件电容

减小开关损耗.

Abstract

Based on traditional planar gate IEGT device

a new composite gate structure IEGT device was designed. The device is compatible with electron injection enhancement and carriers storage technology. The longitudinally extending trench gate of the device increases the effective gate length without increasing gate area

and carrier concentration inside the N-drift region is increased. The existence of the trench can reduce the electric field of the side of the P-type base

improve the breakdown voltage falling because of high concentration of the N-type barrier layer

and increase surface carrier concentration to reduce device saturation voltage drop. The device has two different thicknesses of the gate oxide

the gate oxide near the p-type base region adopts a thin gate oxide to maintain the devices normal threshold voltage

and the rest of gate region uses thick gate oxide to reduce the device capacitance which is useful to reduce the switching loss.

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Keywords

references

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TAKAHASHI H, HARUGUCHI H, HAGINO H.Carrier stored trench-gate bipolar transistor (CSTBT) -a novel power device for high voltage application[C]//ISPSD′96. NEW YORK, NY, USA, 1996: 349-352.

MORI M, UCHINO Y, SAKANO J. A novel High-conductivity IGBT (HiGT) with a short circuit capability[C]// ISPSD 1998. Kyoto, Japan, 1998: 429-432.

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NAAYAGI R T, SHUTTLEWORTH R, FORSYTH A J. Investigating the effect of snubber capacitor on high power IGBT turn-off[C]//1st International Conference on Electrical Energy Systems. Tamilnadu, India, 2011: 50-55.

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毛国锋.IGBT产业"十三五"有望大发展[J].电器工业, 2015, 15(11): 16-17. DOI: 16

沈千行, 张须坤, 张广银, 等. IGBT载流子增强技术发展概述[J], 半导体技术, 2016, 40(10):751-757. DOI: 751

张金平, 赵倩, 高巍. IGBT新技术及发展趋势[J].大功率交流技术, 2017, 11(5):21-27. DOI: 21

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