A 2.4 GHz SiGe full integrated RF front-end

LIU Qi; GAN Ye-bin; HUANG Wu-kang

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A 2.4 GHz SiGe full integrated RF front-end

更新时间：2026-09-04

- A 2.4 GHz SiGe full integrated RF front-end
- Vol. 37, Issue 10, Pages: 7-12(2020)
- 作者机构：
  
  1. 中科院微电子研究所,北京,100029
  2. 中国科学院大学机构,北京,101408
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2020
- 稿件说明：
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刘启, 甘业兵, 黄武康. 一种2.4 GHz SiGe全集成射频前端电路[J]. 微电子学与计算机, 2020, 37(10): 7-12.

LIU Qi, GAN Ye-bin, HUANG Wu-kang. A 2.4 GHz SiGe full integrated RF front-end[J]. 2020, 37(10): 7-12.
刘启, 甘业兵, 黄武康. 一种2.4 GHz SiGe全集成射频前端电路[J]. 微电子学与计算机, 2020, 37(10): 7-12. DOI：

LIU Qi, GAN Ye-bin, HUANG Wu-kang. A 2.4 GHz SiGe full integrated RF front-end[J]. 2020, 37(10): 7-12. DOI：

摘要

基于0.18 m SiGe工艺设计了一款2.4 GHz全集成射频前端电路.该射频前端包含了四个单刀开关、一个功率放大器(PA)和一个低噪声放大器(LNA).基于联合设计的思路，该电路只有一个输入管脚和一个输出管脚，低噪声放大器的阻抗匹配网络与功率放大器阻抗匹配网络一同在片上完成.该芯片工作电压为3.3 V，在接收模式时，该射频前端的增益为13.5 dB，噪声系数为2.8 dB，静态工作电流为5.1 mA；在发射模式时，该射频前端的功率增益为25.4 dB，饱和功率为24.3 dBm，最大PAE为30.8%，输出20 dBm功率时频谱满足802.15.4协议要求.该射频前端无需片外元器件即可实现50 Ω的输入输出匹配.

Abstract

A 2.4 GHz low noise full integrated RF (radio frequency) front end circuit is presented in this paper. The full integrated RF front end circuit is composing of LNA (low noise amplifier) and PA (power amplifier)

it can receive and transmit RF signal. The proposed circuit is implemented in a 0.18um SiGe process. Based on the concept of circuit co-design

the match network of LNA and PA is co-designed on chip

there are only one input pad and one output pad. Simultaneously

two inductors short to ground is inserted into the match network which is used to offer ESD protection. The supply voltage of the circuit is 3.3 V

it consumes 5.1 mA in receive mode and 17 mA in transmit mode. In the receive mode

the proposed circuit exhibited a gain of 13.5 dB and the noise figure is 2.8 dB. While change to transmit mode

the proposed circuit achieves a power gain of 25.4 dB and the saturation output power is 24.3 dBm.

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Keywords

references

YAMAMOTO K, HEIMA T, FURUKAWA A, et al. A 2.4-GHz-band 1.8V operation single-chip SI-COMS T/R-MMIC front-end with a low insertion loss switch [J]. IEEE Journal of Solid-State Circuits, 2001, 36(8): 1186-1197. DOI: 1186

CHEN H S, TSAI H Y, CHUO L X, et al. A 5.2GHz full-integrated RF front-end by T/R switch, LNA, and PA co-design with 3.2-db NF and +25.9dBm output power [C] //IEEE Asian Solid-State Circuits Conference [IEEE], 2015: 1.

GOSWAMI S, KIM H, DAWSON J L. A frequency Agile RF frontend architecture for multi-band TDD applications [J]. IEEE Journal of Solid-State Circuits, 2014, 49(10):2127-2140. DOI: 2127

POH J C H, CHENG P, CRESSLER J D, et al. High gain, High linearity, L-band SiGe low noise amplifier with fully-integrated matching network [C] //SiRF. [IEEE], 2010: 69.

KIM Y J, HWANG I C, BAEK D. A switchless ZigBee Frontend transceiver with matching component sharing of LNA and PA [J]. IEEE Microwave and Wireless Components Letters, 2010, 20(9):516-518. DOI: 516

LEROUX P, STEYAERT M. High-performance 5.2 GHz LNA with on-chip inductor to provide ESD protection [J]. Electronics Letters, 2001, 37(7): 467-469. DOI: 467

GORDON M, VOINIGESCU S P. An inductor-based 52GHz 0.18μm SiGe HBT cascode LNA with 22 dB gain [C] // Proceedings of the 30th European Solid-State Circuits Conference [IEEE], 2004: 287.

LONG J R. A low-voltage 5.1-5.8 GHz image-reject downconverter RF IC [J]. IEEE Journal of Solid-State Circuits, 2000, 35(9): 1320-1328. DOI: 1320

DATTA S, DUTTA A, BHATTACHARYYA T K. A gain boosted fully concurrent dual-band interstage matched LNA operating in 900 MHz/2.4 GHz with sub-2dB Noise Figure [C] //ICCCT [IEEE], 2010: 25.

HAMPEL S K, SCHMITZ O, TIEBOUT M, et al. 9GHz wideband CMOS RX and TX front-ends for universal radio applications [J]. IEEE Transactions on Microwave Theory and Techniques, 2012, 60(4): 1105-1116. DOI: 1105

XIAO X, PRATT A, YANG B, et al. A 65-nm CMOS wideband TDD front-end with integrated T/R switching via PA re-use [J]. IEEE Journal of Solid-State Circuits, 2017, 52(7): 1768-1782. DOI: 1768

JOO T, LEE D H, HONG S. A fully integrated RF CMOS front-end IC for connectivity applications [J]. IEEE TCS Ⅱ: Express Briefs, 2016, 63(11):1024-1028. DOI: 1024

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