Design of low-loss silicon MZ electro-optic modulator driving electrodes

LIU Yong-chao; JI peng-fei; HE Wei-feng

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Design of low-loss silicon MZ electro-optic modulator driving electrodes

更新时间：2026-09-04

- Design of low-loss silicon MZ electro-optic modulator driving electrodes
- Vol. 37, Issue 10, Pages: 13-17(2020)
- 作者机构：
  
  上海交通大学微纳电子学系,上海,200240
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2020
- 稿件说明：
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刘永超, 纪鹏飞, 何卫锋. 一种低损耗硅基MZ电光调制器的驱动电极设计[J]. 微电子学与计算机, 2020, 37(10): 13-17.

LIU Yong-chao, JI peng-fei, HE Wei-feng. Design of low-loss silicon MZ electro-optic modulator driving electrodes[J]. 2020, 37(10): 13-17.
刘永超, 纪鹏飞, 何卫锋. 一种低损耗硅基MZ电光调制器的驱动电极设计[J]. 微电子学与计算机, 2020, 37(10): 13-17. DOI：

LIU Yong-chao, JI peng-fei, HE Wei-feng. Design of low-loss silicon MZ electro-optic modulator driving electrodes[J]. 2020, 37(10): 13-17. DOI：

摘要

为了满足高数据带宽的硅光互联应用要求，高速硅光调制器的设计至关重要.本文基于IMEC的硅光子SOI工艺，提出了一种低损耗高带宽的行波MZ调制器的驱动电极.在详细分析了趋肤效应、行波损耗、邻近效应等物理效应对行波电极信号完整性的影响的基础上，通过在行波电极上增加一定宽度的顶层金属的方法，使MZ调制器的低频损耗降低了13%，高频损耗降低了5%，并使电光调制3 dB带宽提高至28 GHz.

Abstract

In order to meet the requirements of silicon optical interconnect applications with high data bandwidths

the designofhigh-speed silicon optical modulators is of vital importance. Based on the silicon photonic SOI process of IMEC

a driving electrode for a low-loss and high-bandwidth traveling wave MZ modulator is proposed. Based on a detailed analysis of the effects of skin effects

traveling wave loss

proximity effects and other physical effects on the traveling wave electrode signal

a small amount of metal with a certain width is added to the top of traveling wave electrode

which leads to the low-frequency loss of MZ modulator decreasing by 13% and the high-frequency lossdecreasing by 5%. Additionally

the 3dB bandwidth of MZ modulator is enhanced to 28GHz.

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references

GAO JING, WU HUI. Multi-function Mach-Zehnder modulator for pulse shaping and generation[J]. Optics Express, 2016, 24(19):22239-22249. DOI: 22239

DING J, CHEN H, YANG L, et al. Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS compatible integration[J]. Optics Express, 2012, 20(3):3209-3218. DOI: 3209

LEE THOMAS H. The Design of CMOS Radio-Frequency Integrated Circuits [M].Second Edition, Beijing: Publishing House of Electronics Industry. 2006: 114-120.

LGUIZHEN, GQINGXIN, LZENGRUI. Study of the proximity effect and the distribution parameters of multi-conductor transmission line[C]// 2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT). IEEE, 2016.

KIM S, LEE C U, SONG M, et al. Design and characterization for travelling waveelectrodes of highspeed Mach-Zehnder electro-optic modulator on an n-doped InP substrate[J]. Microwave and Optical Technology Letters, 2018, 60(6):1558-1562.t DOI: 1558

ZHOU L J, ZHOU Y Y, LU L J. Design optimization and implementation of silicon mach-zehnder electro-optic modulators[J]. ZTE Technology Journal, 2017(5):25-33. DOI: 25

JI P F, HE W F. Design of 25 Gbps silicon MZ electro-optic modulator driving electrodes[J]. Microelectronics % Computer, 2018, 35(8):6-10. DOI: 6

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