A technique for improving the transient response of high current LDO

MEI Qi; LONG yan; LIU Zhi; YAO Si-yuan; GE mei; LIU Wen-ping

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A technique for improving the transient response of high current LDO

更新时间：2026-09-04

- A technique for improving the transient response of high current LDO
- Vol. 37, Issue 10, Pages: 64-68(2020)
- 作者机构：
  
  西安微电子技术研究所,陕西,西安,710054
- 作者简介：
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- Published：2020
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梅琦, 龙燕, 刘智, 姚思远, 葛梅, 刘文平. 一种提高大电流LDO瞬态响应的技术[J]. 微电子学与计算机, 2020, 37(10): 64-68.

MEI Qi, LONG yan, LIU Zhi, et al. A technique for improving the transient response of high current LDO[J]. 2020, 37(10): 64-68.
梅琦, 龙燕, 刘智, 姚思远, 葛梅, 刘文平. 一种提高大电流LDO瞬态响应的技术[J]. 微电子学与计算机, 2020, 37(10): 64-68. DOI：

MEI Qi, LONG yan, LIU Zhi, et al. A technique for improving the transient response of high current LDO[J]. 2020, 37(10): 64-68. DOI：

摘要

提出了一种有效提升大电流输出的低压差线性稳压器(LDO)瞬态响应的技术.该技术采用新颖的电压双反馈环路，实现了带宽延展；采用摆率增强电路提高了功率管栅极节点的压摆率；采用输出电流泄放电路，加快了负载电流突降后的恢复.基于0.6 m BiCMOS工艺完成设计、流片.结果表明:在1 mA~5 A，斜率为1.25 A/s的负载突变情况下，输出电压下冲仅30.8 mV，过冲仅20.7 mV.

Abstract

A technique is proposed to improve the transient response of high outputcurrent low-voltage regulator (LDO).This techniqueuses a novel dual feedback loop which achieves the bandwidthextensionandaslew-rateenhancement circuit whichenhancestheslew-rateatthegateofthepowertransistor and anoutput current discharge circuitwhich boosts the recovery speed ofthe outputafter the undershoot of the load current.Designed and fabricated with 0.6m BiCMOS process.The results show that the output voltage undershoot is only 30.8mV and overshoot is only 20.7mV under the condition of a load mutation of 1mA to 5A when the slope is 1.25A/s.

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references

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