Investigation on disturbance characteristics and test algorithm of SONOS embedded flash memory

WU Le; LIU Wu; HONG Liang

Chinese

您当前的位置：

首页 >

文章列表页 >

Investigation on disturbance characteristics and test algorithm of SONOS embedded flash memory

更新时间：2026-09-04

- Investigation on disturbance characteristics and test algorithm of SONOS embedded flash memory
- Vol. 38, Issue 5, Pages: 7-13(2021)
- 作者机构：
  
  1. 上海交通大学微米/纳米加工技术国家级重点实验室,上海,200240
  2. 上海交通大学电子信息与电气工程学院微纳电子学系,上海,200240
  3. 上海华力微电子有限公司,上海,201314
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2021
- 稿件说明：
移动端阅览
乌勒, 刘武, 洪亮. 基于SONOS型嵌入式flash存储器的扰动失效测试算法研究[J]. 微电子学与计算机, 2021, 38(5): 7-13.

WU Le, LIU Wu, HONG Liang. Investigation on disturbance characteristics and test algorithm of SONOS embedded flash memory[J]. 2021, 38(5): 7-13.
乌勒, 刘武, 洪亮. 基于SONOS型嵌入式flash存储器的扰动失效测试算法研究[J]. 微电子学与计算机, 2021, 38(5): 7-13. DOI：

WU Le, LIU Wu, HONG Liang. Investigation on disturbance characteristics and test algorithm of SONOS embedded flash memory[J]. 2021, 38(5): 7-13. DOI：

摘要

目前flash扰动失效测试算法无法检测SONOS型flash存储器的全部扰动失效，特别是对读扰动失效检测的失效覆盖率低，且测试效率不高.针对这一问题，本文对March-FT测试算法进行扩展和优化，提出了一种用于检测SONOS型flash存储器的扰动失效测试算法——March-SONOS.结合算法评估系统验证，March-SONOS测试算法可检测SONOS型flash存储器的全部扰动失效，且失效覆盖率达到100%，同时算法测试效率提高55.97%.

Abstract

The current Flash disturbance failure test algorithm cannot detect all the disturbance failures of SONOS-type Flash memory

especially the failure coverage of read disturbance failure test is low

and the test efficiency is poor. To solve this problem

this paper extends and optimises the March-FT test algorithm

and put forward the March-SONOS test algorithm

which is used to detect the disturbance failure test algorithm of SONOS-type Flash memory.Combined with the verification of the algorithm evaluation system

the March_SONOS test algorithm can detect all disturbance failures of SONOS-style Flash memory

and the failure coverage rate reaches 100%. Meanwhile

the algorithm test and test efficiency is improved by 55.97%.

关键词

Keywords

references

IEEE. IEEE Std 1005-1991 IEEE standard definitions and characterization of floating gate semiconductor arrays[S]. IEEE, 1991. DOI: 10.1109/IEEESTD.1991.101070.

ZHANG Q W, ZENG Z M, ZHANG Y X, et al. EFA method of AA-bridge-type-defect of SONOS NOR flash[C]//Proceedings of 2019 China Semiconductor Technology International Conference (CSTIC). Shanghai, China: IEEE, 2019: 1-4. DOI: 10.1109/CSTIC.2019.8755717.

TSUJI Y, TERAI M, FUJIEDA S, et al. New degradation mode of program disturb immunity of sub 90-nm node split-gate SONOS memory[C]//Proceedings of 2008 IEEE International Reliability Physics Symposium. Phoenix, AZ, USA: IEEE, 2008: 699-700. DOI: 10.1109/RELPHY.2008.4558995.

YEH J C, CHENG K L, CHOU Y F, et al. Flash memory testing and built-in self-diagnosis with march-like test algorithms[J]. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2007, 26(6): 1101-1113. DOI: 10.1109/TCAD.2006.885828.

LIU L J, SHEN G F, CAO G, et al. Study of the disturb in SONOS memory[C]//Proceedings of the IEEE 11th International Conference on Solid-State and Integrated Circuit Technology. Xi'an, China: IEEE, 2012: 1-3. DOI: 10.1109/ICSICT.2012.6466695.

CHENG K L, YEH J C, WANG C W, et al. RAMSES-FT: a fault simulator for flash memory testing and diagnostics[C]//Proceedings of the 20th IEEE VLSI Test Symposium (VTS 2002). Monterey, CA, USA: IEEE, 2002: 281-286. DOI: 10.1109/VTS.2002.1011153.

杨丽婷, 王琴, 倪昊, 等. pFlash故障测试算法[J]. 微电子学与计算机, 2019, 36(9): 55-60. DOI: 10.19304/j.cnki.issn1000-7180.2019.09.011. YANG L T, WANG Q, NI H, et al. Fault test algorithm based on pFlash[J]. Microelectronics % Computer, 2019, 36(9): 55-60. DOI: 10.19304/j.cnki.issn1000-7180.2019.09.011.

MARTIROSYAN S, HARUTYUNYAN G, SHOUKOURIAN S, et al. An efficient testing methodology for embedded flash memories[C]//Proceedings of 2017 IEEE East-West Design % Test Symposium (EWDTS). Novi Sad: IEEE, 2017: 1-4. DOI: 10.1109/EWDTS.2017.8110074.

HIDAKA H. Evolution of embedded flash memory technology for MCU[C]//Proceedings of 2011 IEEE International Conference on IC Design % Technology. Kaohsiung, China: IEEE, 2011: 1-4. DOI: 10.1109/ICICDT.2011.5783209.

郭进杰, 王瑜, 李婷, 等. 基于FLASH-March算法的FLASH缺陷检测系统[J]. 微电子学与计算机, 2014, 31(10): 81-85. DOI: 10.19304/j.cnki.issn1000-7180.2014.10.019. GUO J J, WANG Y, LI T, et al. A flash fault detection system based on FLASH-March algorithm[J]. Microelectronics % Computer, 2014, 31(10): 81-85. DOI: 10.19304/j.cnki.issn1000-7180.2014.10.019.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Novel High-Speed Radiation Hardened Sense Amplifier for SOI Based SONOS Memory

Monte carlo analysis of V-layout trench SiC neutron detector

A feature-oriented context understanding and slice analysis network for tuberculosis detection

Aerial small object detection algorithm based on improved RT-DETR

A review of large model development: technological evolution from BERT to Deepseek

Related Author

LI Kan

WU Dong

WANG Xue-qiang

QIAO Feng-ying

DENG Ning

PAN Li-yang

Related Institution

1 Institute of Microelectronics, Tsinghua University

2 Tsinghua National Laboratory of Information Science and Technology, Tsinghua University

AI问答

Postal code：100079
Tel：（010）53879206 Email：tmw@bjxintong.com.cn
Technical support is provided by Beijing Founder electronics co., LTD 京ICP备09082226号-64 京公网安备11010602201714号
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰