A design of Ka-band power amplifier based on 0.15μm GaAs pHEMT process

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A design of Ka-band power amplifier based on 0.15μm GaAs pHEMT process

更新时间：2026-09-04

- A design of Ka-band power amplifier based on 0.15μm GaAs pHEMT process
- Vol. 38, Issue 1, Pages: 17-21(2021)
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- Published：2021
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一种基于0.15μm GaAs pHEMT工艺的Ka波段功率放大器设计[J]. 微电子学与计算机, 2021, 38(1): 17-21.

A design of Ka-band power amplifier based on 0.15μm GaAs pHEMT process[J]. 2021, 38(1): 17-21.
一种基于0.15μm GaAs pHEMT工艺的Ka波段功率放大器设计[J]. 微电子学与计算机, 2021, 38(1): 17-21. DOI：

A design of Ka-band power amplifier based on 0.15μm GaAs pHEMT process[J]. 2021, 38(1): 17-21. DOI：

摘要

基于0.15μm GaAs pHEMT工艺设计了一款Ka波段AB类功率放大器.该功率放大器对匹配网络中的通孔电容设计进行改进.将改进式通孔电容运用于功合器设计中.此项改进使输出级功合器的插入损耗改善了0.8~3dB

提高了功率合成效率.测试结果显示

此功率放大器在33-37GHz工作频率内

实现了31±1dB的小信号增益

饱和输出功率大于31.18dBm

功率附加效率(PAE)大于21.7%.

Abstract

A Ka band AB class power amplifier (PA) is designed based on 0.15μm GaAs pHEMT process. The layout of via capacitor in matching network is proposed and applied into the design of power combiner of output stage. This improvement reduced the insertion loss of power combiner of 0.8~3dB and proposed the power combining efficiency. The test results show that

within the working frequency from 33 to 37GHz

the PA realizes a small signal gain of 31±1dB

saturated output power of more than 31.18dBm and PAE of more than 21.7%.

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