An on-state open load detection circuit for intelligent high side power IC

ZHANG Xiao-qin; CAI Xiao-wu; ZENG Chuan-bin; YAN Wei-wei; ZHAO Hai-tao; LIU Hai-nan; LUO Jia-jun

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An on-state open load detection circuit for intelligent high side power IC

更新时间：2026-09-04

- An on-state open load detection circuit for intelligent high side power IC
- Vol. 37, Issue 12, Pages: 17-21(2020)
- 作者机构：
  
  1. 中国科学院机构微电子研究所,北京,100029
  2. 中国科学院大学机构,北京,101408
  3. 中国科学院硅器件与技术重点实验室,北京,100029
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2020
- 稿件说明：
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张小琴, 蔡小五, 曾传滨, 闫薇薇, 赵海涛, 刘海南, 罗家俊. 一种用于智能高边功率IC的负载开路检测电路[J]. 微电子学与计算机, 2020, 37(12): 17-21.

ZHANG Xiao-qin, CAI Xiao-wu, ZENG Chuan-bin, et al. An on-state open load detection circuit for intelligent high side power IC[J]. 2020, 37(12): 17-21.
张小琴, 蔡小五, 曾传滨, 闫薇薇, 赵海涛, 刘海南, 罗家俊. 一种用于智能高边功率IC的负载开路检测电路[J]. 微电子学与计算机, 2020, 37(12): 17-21. DOI：

ZHANG Xiao-qin, CAI Xiao-wu, ZENG Chuan-bin, et al. An on-state open load detection circuit for intelligent high side power IC[J]. 2020, 37(12): 17-21. DOI：

摘要

基于BCD工艺，设计了一种用于智能高边功率开关的新型开态负载开路检测电路.采用双重判决电路，解决了传统检测方法所带来的额外电压降和小电流检测误差太大的问题，提高了负载开路检测的精度和可靠性，且能实现1 mA~10 mA的低阈值电流检测.Cadence Spectre仿真表明，在开路检测阈值电流为3 mA的情况下，检测精度达98%；在电源电压为24 V的情况下，电荷泵输出电压为27.67 V，充电时间为16.89 μs，放电时间为20.3 μs，此智能高边功率电路开关时间远远小于英飞凌同类型产品100 μs左右的开关时间.

Abstract

A novel on-state open load detection circuit for intelligent high side power switch are presented based on BCD process. By using a double decision circuit

the problem of excessive voltage drop and small current detection error caused by traditional detection method is solved

the accuracy and reliability of open load detection are improved

and low threshold current detection of 1mA~10mA can be achieved. The Cadence Spectre simulation shows that with a threshold current of 3 mA

the open load detection accuracy is 98%. At a supply voltage of 24V

the charge pump output voltage is 27.67V

the charging time is 16.89μs

and the discharge time is 20.3μs. The switching time of this intelligent high-edge power circuit is far less than that of the same type of infineon products around 100μs.

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references

DEL CP, HADZIV J, MELDT B, et al. Configurable high side power switch in smart power technology[C]// 2007 14th International Conference on Mixed Design of Integrated Circuits and Systems. Ciechocinek, Poland, 2007: 570-573.

CREOSTEANU L. Automotive high side power switch driver circuit[C]//2008 International Semiconductor Conference. Sinaia, Romania, 2008: 415-418.

DAVIS B, WELLNITZ K. Intelligent diagnostic features available for high side power switching[C]// Proceedings of 1994 IEEE Workshop on Power Electronics in Transportation. Dearborn, MI, USA, 1994: 23-31.

JAYANT B. An overview of smart power technology[J]. IEEE Transactions on Electron Devices, 1991, 38(7): 1568-1575. DOI: 1568

GIVELIN P, BAFLEUR M, LAOPOULOS T, et al. On-chip overcurrent and open load detection for a power MOS high-side switch: a CMOS current mode approach[C]// 1993 Fifth European Conference on Power Electronics and Applications. Brighton, UK, 1993: 197-200.

TERCARIOL W L. High and low side high voltage switch with over voltage and over current protection[C]// 2013IEEE Computer Society Annual Symposium on VLSI (ISVLSI). Natal, Brazil, 2013: 177-181.

GARIBOLDI R. A 70 mΩ intelligent high side switch with full diagnostics[C]// Twenty-first European Solid-State Circuits Conference. Lille, France, 1995: 262-265.

WILLIAM C. Driving and protection of high side NMOS power switches[J]. IEEE Transactions on Industry Applications, 1992(1): 26-30. DOI: 26

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