A wide power voltage reference with high-order curvature compensation

LU Hang; CAI Xiao-wu; HAN Zheng-sheng; LIU Hai-nan; LUO Jia-jun

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A wide power voltage reference with high-order curvature compensation

更新时间：2026-09-04

- A wide power voltage reference with high-order curvature compensation
- Vol. 37, Issue 12, Pages: 38-41(2020)
- 作者机构：
  
  1. 中国科学院机构微电子研究所,北京,100029
  2. 中国科学院大学机构,北京,101408
- 作者简介：
- 基金信息：
- DOI：
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- Published：2020
- 稿件说明：
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陆航, 蔡小五, 韩郑生, 刘海南, 罗家俊. 一种宽电源带有高阶温度补偿的电压基准电路[J]. 微电子学与计算机, 2020, 37(12): 38-41.

LU Hang, CAI Xiao-wu, HAN Zheng-sheng, et al. A wide power voltage reference with high-order curvature compensation[J]. 2020, 37(12): 38-41.
陆航, 蔡小五, 韩郑生, 刘海南, 罗家俊. 一种宽电源带有高阶温度补偿的电压基准电路[J]. 微电子学与计算机, 2020, 37(12): 38-41. DOI：

LU Hang, CAI Xiao-wu, HAN Zheng-sheng, et al. A wide power voltage reference with high-order curvature compensation[J]. 2020, 37(12): 38-41. DOI：

摘要

介绍了一种新型电压基准电路，通过引入高阶温度补偿和电源预调整结构，提高了基准电压精度.电路采用BCD工艺仿真，在-20~125℃温度范围内，输出电压的温度系数为1.4 ppm/℃；3 V到40 V的范围内，电源电压引起的基准电压变化率为0.000 66%.本文设计的电压基准电路特别适用于宽电源电压输入，且对精度要求高的应用.

Abstract

A innovativevoltage reference generator topologyis presents in this paper.The design introducesa high-order curvature-compensation and a power preliminary adjustment structure toimprove the precision of voltage reference.The proposed design was implemented in a BCD process.Simulationresults have shown typicaltemperature coefficients as low as 1.4ppm/℃ overa temperature range of-20℃~125℃.The voltage variation is 0.000 66% when operate voltage changes from 3 V to 40 V. The proposed voltage reference can be used in the design which requires wide power supply voltage input and high precision voltage reference.

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references

MA B, YU F.A Novel 1.2-V 4.5-ppm/℃ Curvature-Compensated CMOS Bandgap Reference[J].IEEE Transactions on Circuits and Systems I: Regular Papers, 2014, 61(4):1026-1035. DOI: 1026

Xian RAZAVI B.Design of Analog CMOS Integrated Circuits[M]. Xian: Xian Jiaotong University Press, 2003:312-315. DOI: 312

TSIVIDISYP. Accurate analysis of temperature effects in IC-VBEcharacteristics with application to bandgap reference sources[J]. IEEE Journal of Solid-State Circuits, 1980, 15(6): 1076-1084. DOI: 1076

LI J, ZHANG X, YU M.A 1.2-V Piecewise Curvature-Corrected Bandgap Reference in 0.5μm CMOS Process[J].IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2011, 19(6):1118-1122. DOI: 1118

XING X M, LI J C, ZHENG L H.A Low-Power Bandgap Voltage Reference Based on Subthreshold CMOS[J].Microelectronics % Computer, 2015, 32(10):151-154+158. DOI: 151

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