WEI Chong-min, SONG Shu-xiang, JIANG Pin-qun, et al. A high-PSRR high-precision multi-order current compensation bandgap reference[J]. 2021, 38(5): 60-64.
WEI Chong-min, SONG Shu-xiang, JIANG Pin-qun, et al. A high-PSRR high-precision multi-order current compensation bandgap reference[J]. 2021, 38(5): 60-64.DOI:
A high-PSRR high-precision multi-order current compensation bandgap reference
A high-precision multi-order current compensation bandgap reference circuit with high PSRR is designed. The improved Wilson self-bias circuit combined with the amplifier is used to obtain high PSRR. The curvature of reference voltage in high temperature and low temperature section is compensated by 4 order precise compensation current. Based on 0.13 μm process
thereference circuitisdesignedandthe simulation results show that the temperature drift coefficient of the band-gap reference voltage is 1.68ppm/oC and the PSRR is 90.4 dB under the condition of 3.3 V supply voltage and temperature from -100℃ to 140 ℃.
关键词
Keywords
references
李宏杰, 冯全源. 一种二阶曲率补偿的低温漂高精度带隙基准设计[J]. 电子元件与材料, 2014, 33(12): 65-69. DOI: 10.14106/j.cnki.1001-2028.2014.12.017. LI H J, FENG Q Y. Design of a second-order curvature-compensated band-gap referencewith low temperature-drift and high precision[J]. Electronic Components % Materials, 2014, 33(12): 65-69. DOI: 10.14106/j.cnki.1001-2028.2014.12.017.
殷嘉琳, 李富华, 黄君山, 等. 一种高电源抑制比带隙基准电压源的设计[J]. 电子与封装, 2020, 20(1): 010202. DOI: 10.16257/j.cnki.1681-1070.2020.0108. YIN J L, LI F H, HUANG J S, et al. Design of a high power supply rejection ratio bandgap referencevoltage[J]. Electronics andPackaging, 2020, 20(1): 010202. DOI: 10.16257/j.cnki.1681-1070.2020.0108.
ZHOU Q N, LI Y S, LIN J Z, et al. High-PSRR high-order curvature-compensated CMOS bandgap voltage reference[J]. Journal of Harbin Institute of Technology, 2015, 22(5): 116-124. DOI:10.11916/j.issn.1005-9113.2015.05.018.
李娟, 张海波, 李健, 等. 一种带有温漂修调的二阶曲率补偿基准源电路[J]. 电子与封装, 2019, 19(11): 26-30. DOI:10.16257/j.cnki.1681-1070.2019.1106. LI J, ZHANG H B, LI J, et al. Second-order curvature-compensated band-gap reference with trimming resistive circuits[J]. Electronics and Packaging, 2019, 19(11): 26-30. DOI:10.16257/j.cnki.1681-1070.2019.1106.
孙帆, 黄海波, 卢军, 等. 一种新型的分段曲率补偿带隙基准源设计[J]. 电子元件与材料, 2020, 39(1): 80-85. DOI:10.14106/j.cnki.1001-2028.2020.01.015. SUN F, HUANG H B, LU J, et al. Design of a novelpiecewise curvature compensated bandgap reference[J]. Electronic Components % Materials, 2020, 39(1): 80-85. DOI:10.14106/j.cnki.1001-2028.2020.01.015.
SWANSON R M, MEINDL J D. Ion-implanted complementary MOS transistors in low-voltage circuits[J]. IEEE Journal of Solid-State Circuits, 1972, 7(2): 146-153. DOI: 10.1109/JSSC.1972.1050260.
周志兴, 来强涛, 姜宇, 等. 一种高电源抑制比带隙基准源[J]. 微电子学与计算机, 20 19, 36(5): 1-4. DOI: 10. 19304/j.cnki.issn 1000-7 180.20 19.05.00 1. ZHOU Z X, LAI Q T, JIANG Y, et al. A high PSRR bandgap reference[J]. Microelectronics % Computer, 20 19, 36(5): 1-4. DOI: 10. 19304/j.cnki.issn 1000-7 180.20 19.05.00 1.
王轩, 刘洁, 赖晓玲, 等. 一种适用于低压差分信号驱动电路的带隙基准源设计[J]. 微电子学与计算机, 2020, 37(2): 75-79. DOI: 10.19304/j.cnki.issn1000-7180.2020.02.013. WANG X, LIU J, LAI X L, et al. A novel design of band-gapreference for LVDS[J]. Microelectronics % Computer, 2020, 37(2): 75-79. DOI: 10.19304/j.cnki.issn1000-7180.2020.02.013.