Investigation of CuPc Organic Film Schottky Diode

ZHANG Jian; WANG Dong-xing

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Investigation of CuPc Organic Film Schottky Diode

更新时间：2026-07-10

- Investigation of CuPc Organic Film Schottky Diode
- Vol. 15, Issue 4, Pages: 38-41(2010)
- 作者机构：
  
  哈尔滨理工大学应用科学学院
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN311.7
- Published：2010
- 稿件说明：
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ZHANG Jian, WANG Dong-xing. Investigation of CuPc Organic Film Schottky Diode[J]. 2010, 15(4): 38-41.
DOI：

ZHANG Jian, WANG Dong-xing. Investigation of CuPc Organic Film Schottky Diode[J]. 2010, 15(4): 38-41. DOI：

摘要

提出了一种基于有机半导体材料制作肖特基二极管的方法

通过真空气相沉积工艺依次将金属铝

酞菁铜和金属铜镀在玻璃基片上.在室温下测试该二极管的电流-电压(I-V)特性发现

其整流系数可达103.根据实验所得的电容-电压(C-V)的测试结果

得到该二极管的肖特基势垒高度在0.7V.

Abstract

An effective preparation method is proposed for a type of organic/metal Schottky diode.A metal electrode Al

an organic film CuPc

and a metal electrode Cu are deposited on the glass respectively with a simple vacuum evaporation technology.The I-V properties of the diode

measured at room temperature

show that the commutating coefficient of the devices reaches 103.According to standard Schottky theory and the capacitance-voltage

we can conclude that the organic Schottky potential is about 0.7V.

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