Performance Simulation and Analysis of Trench Gate Lateral Insulated Gate Bipolar Transistor with Low on-state Resistance

LI Ting; WANG Ying; CHEN Yu-xian; GAO Song-song; CHENG Chao

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Performance Simulation and Analysis of Trench Gate Lateral Insulated Gate Bipolar Transistor with Low on-state Resistance

更新时间：2026-07-10

- Performance Simulation and Analysis of Trench Gate Lateral Insulated Gate Bipolar Transistor with Low on-state Resistance
- Vol. 17, Issue 1, Pages: 78-81(2012)
- 作者机构：
  
  哈尔滨工程大学信息与通信工程学院
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386
- Published：2012
- 稿件说明：
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LI Ting, WANG Ying, CHEN Yu-xian, et al. Performance Simulation and Analysis of Trench Gate Lateral Insulated Gate Bipolar Transistor with Low on-state Resistance[J]. 2012, 17(1): 78-81.
DOI：

LI Ting, WANG Ying, CHEN Yu-xian, et al. Performance Simulation and Analysis of Trench Gate Lateral Insulated Gate Bipolar Transistor with Low on-state Resistance[J]. 2012, 17(1): 78-81. DOI：

摘要

横向绝缘栅双极晶体管(LIGBT)采用少数载流子的注入来降低导通电阻

完成了5μm外延层上普通LIGBT(C-LIGBT)、3μm外延层上的Trench Gate LIGBT(TG-LIGBT)设计及仿真.研究了利用沟槽结构改善LIGBT的正向特性和利用RESURF技术改善TG-LIGBT的反向特性.通过Silvaco TCAD软件验证了了击穿电压大于500 V的两种结构LIGBT设计

实现了导通压降为1.0 V

薄外延层上小元胞尺寸

且有低导通电阻、大饱和电流的TG-LIGBT器件.

Abstract

LIGBT has the advantage of very low on-resistance because of minority carriers injection.The optimization and simulation of this article is completed within two structures: 5 μm conventional LIGBT(C-LIGBT) and 3 μm Trench Gate LIGBT(TG-LIGBT) with epitaxial layer.The purpose of this thesis is to improve on-state performance based on trench gate and off-state performance through RESURF.Two over 500 V breakdown voltage LIGBT are investigated under the Silvaco TCAD software.A lower on-state resista...

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