AlN Buffer Layer to ZnO Thin Films Influence under Different Sputtering Time

ZHAO Xiang-min; LI Min-jun; ZHANG Wei; ZHAO Wen-hai

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AlN Buffer Layer to ZnO Thin Films Influence under Different Sputtering Time

更新时间：2026-07-10

- AlN Buffer Layer to ZnO Thin Films Influence under Different Sputtering Time
- Vol. 17, Issue 2, Pages: 114-117(2012)
- 作者机构：
  
  1. 牡丹江师范学院新型碳基功能与超硬材料省级重点实验室
  2. 黑龙江商业职业学院
- 作者简介：
- 基金信息：
- DOI：
  CLC： O484.1
- Published：2012
- 稿件说明：
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ZHAO Xiang-min, LI Min-jun, ZHANG Wei, et al. AlN Buffer Layer to ZnO Thin Films Influence under Different Sputtering Time[J]. 2012, 17(2): 114-117.
DOI：

ZHAO Xiang-min, LI Min-jun, ZHANG Wei, et al. AlN Buffer Layer to ZnO Thin Films Influence under Different Sputtering Time[J]. 2012, 17(2): 114-117. DOI：

摘要

实验采用射频磁控溅射技术

制备了不同溅射时间下AlN缓冲层的ZnO薄膜

研究了薄膜的结构、形貌及电学性能.结果表明

不同溅射时间下AlN缓冲层ZnO薄膜的生长依然是(002)择优取向

而且当缓冲层溅射时间为60min时

ZnO薄膜的结构和电学性能最好.

Abstract

In the experiment

the ZnO thin films were prepared by RF magnetron sputtering under different sputtering time

and the crystalline structure

surface morphologies and photoelectric properties of the samples were studied.The results showed that under different sputtering time of ZnO thin film AlN buffer layer growth is still(002) preferred orientation

and when the buffer layer of the sputtering time was 60min

ZnO thin film structure and electrical properties is of the best.

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