On Equilibrium Ga Intergranular Films in Cr2GaC

ZhengMing Sun; Michel  W. Barsoum; Yamei Zhang; Hitoshi Hashimoto

doi:10.1080/21663831.2013.794374

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On Equilibrium Ga Intergranular Films in Cr2GaC

Original Reports | 更新时间：2026-08-19

- On Equilibrium Ga Intergranular Films in Cr2GaC
- Materials Research Letters Vol. 1, Issue 2, Pages: 109-113(2013)
- 作者机构：
  
  1. National Institute of Advanced Industrial Science and Technology (AIST) Nagoya
  2. Department of Materials Science and Engineering Drexel University Philadelphia PA
  3. Department of Materials Science and Engineering Southeast University
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2013.794374
  CLC：
- Online First：24 April 2013，
  
  Published：2013
- 稿件说明：
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ZhengMing Sun, Michel W. Barsoum, Yamei Zhang, et al. On Equilibrium Ga Intergranular Films in Cr2GaC[J]. Materials Research Letters, 2013, 1(2): 109-113.
DOI：

ZhengMing Sun, Michel W. Barsoum, Yamei Zhang, et al. On Equilibrium Ga Intergranular Films in Cr2GaC[J]. Materials Research Letters, 2013, 1(2): 109-113. DOI： 10.1080/21663831.2013.794374.

摘要

The presence of equilibrium intergranular films (IGFs) in metallic systems has long been postulated; compelling evidence for this idea

however

is still lacking. Herein differential scanning calorimetry

in the−60°C to 70°C temperature range

on bulk and Cr

GaC powders was carried out. A sharp endothermic trough

roughly 50°C below the melting point of bulk pure Ga

in the powdered samples was taken to be strong evidence for the presence of IGFs in the latter. The troughs for the sintered body were much more diffuse suggesting that in this case

a distribution of grain boundary thicknesses exists. A temperature dependent adsorption energy is postulated to explain the reversible extrusion and resorption of 100 μm thick Ga micro-pillars.

Abstract

The presence of equilibrium intergranular films (IGFs) in metallic systems has long been postulated; compelling evidence for this idea

however

is still lacking. Herein differential scanning calorimetry

in the−60°C to 70°C temperature range

on bulk and Cr

GaC powders was carried out. A sharp endothermic trough

roughly 50°C below the melting point of bulk pure Ga

in the powdered samples was taken to be strong evidence for the presence of IGFs in the latter. The troughs for the sintered body were much more diffuse suggesting that in this case

a distribution of grain boundary thicknesses exists. A temperature dependent adsorption energy is postulated to explain the reversible extrusion and resorption of 100 μm thick Ga micro-pillars.

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