Nanopatterned Graphene Field Effect Transistor Fabricated Using Block Co-polymer Lithography

Duyoung Choi; Cihan Kuru; Chulmin Choi; Kunbae Noh; Soon-Kook Hong; Santanu Das; Wonbong Choi; Sungho Jin

doi:10.1080/21663831.2013.876676

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Nanopatterned Graphene Field Effect Transistor Fabricated Using Block Co-polymer Lithography

Original Reports | 更新时间：2026-08-19

- Nanopatterned Graphene Field Effect Transistor Fabricated Using Block Co-polymer Lithography
- Materials Research Letters Vol. 2, Issue 3, Pages: 131-139(2014)
- 作者机构：
  
  1. Materials Science and Engineering University of California La Jolla
  2. Materials Science and Engineering University of California La Jolla 93 USA,CA920
  3. Department of Mechanical & Aerospace Engineering University of California La Jolla
  4. Department of Mechanical Engineering and Naval Architecture Republic of Korea Naval Academy Jinhae-gu Changwon-si Gyungnam
  5. Department of Materials Science and Engineering University of North Texas Denton
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2013.876676
  CLC：
- Online First：09 January 2014，
  
  Published：2014
- 稿件说明：
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Duyoung Choi, Cihan Kuru, Chulmin Choi, et al. Nanopatterned Graphene Field Effect Transistor Fabricated Using Block Co-polymer Lithography[J]. Materials Research Letters, 2014, 2(3): 131-139.
DOI：

Duyoung Choi, Cihan Kuru, Chulmin Choi, et al. Nanopatterned Graphene Field Effect Transistor Fabricated Using Block Co-polymer Lithography[J]. Materials Research Letters, 2014, 2(3): 131-139. DOI： 10.1080/21663831.2013.876676.

摘要

We demonstrate a successful fabrication of Nanopatterned Graphene (NPG) using a PS-

-P4VP polymer

which was never used previously for the graphene patterning. The NPG exhibits homogeneous mesh structures with an average neck width of ∼19 nm. Electronic characterization of single and few layers NPG FETs (field effect transistors) were performed at room temperature. We found that the sub-2

0 nm neck width creates a quantum confinement in NPG

which has led to a bandgap opening of ∼0.08 eV. This work also demonstrates that BCP (block co-polymer) lithography is a pathway for low-cost

high throughput large-scale production of NPG with critical dimensions down to the nanometer regime.

Abstract

We demonstrate a successful fabrication of Nanopatterned Graphene (NPG) using a PS-

-P4VP polymer

which has led to a bandgap opening of ∼0.08 eV. This work also demonstrates that BCP (block co-polymer) lithography is a pathway for low-cost

high throughput large-scale production of NPG with critical dimensions down to the nanometer regime.

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Related Institution

b Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University

a State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering Shanghai University Shanghai People’s Republic of China

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a School of Materials Science and Engineering Tianjin Key Laboratory of Composite and Functional Materials Tianjin University

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