Si-integrated ultrathin films of phase-pure Y3Fe5O12 (YIG) via novel two-step rapid thermal anneal

Thomas E. Gage; Prabesh Dulal; Peter A. Solheid; David J. Flannigan; Bethanie J. H. Stadler

doi:10.1080/21663831.2017.1295285

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Si-integrated ultrathin films of phase-pure Y3Fe5O12 (YIG) via novel two-step rapid thermal anneal

Original Report | 更新时间：2026-08-19

- Si-integrated ultrathin films of phase-pure Y3Fe5O12 (YIG) via novel two-step rapid thermal anneal
- Materials Research Letters Vol. 5, Issue 6, Pages: 379-385(2017)
- 作者机构：
  
  1. Department of Chemical Engineering and Materials Science University of Minnesota Minneapolis
  2. Institute for Rock Magnetism University of Minnesota Minneapolis
  3. Department of Chemical Engineering and Materials Science University of Minnesota Minneapolis MN USA
  4. Department of Electrical and Computer Engineering University of Minnesota Minneapolis
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2017.1295285
  CLC：
- Online First：01 March 2017，
  
  Published：2017
- 稿件说明：
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Thomas E. Gage, Prabesh Dulal, Peter A. Solheid, et al. Si-integrated ultrathin films of phase-pure Y3Fe5O12 (YIG) via novel two-step rapid thermal anneal[J]. Materials Research Letters, 2017, 5(6): 379-385.
DOI：

Thomas E. Gage, Prabesh Dulal, Peter A. Solheid, et al. Si-integrated ultrathin films of phase-pure Y3Fe5O12 (YIG) via novel two-step rapid thermal anneal[J]. Materials Research Letters, 2017, 5(6): 379-385. DOI： 10.1080/21663831.2017.1295285.

摘要

Abstract

BSTRACTTraditional one-step annealing of ultrathin amorphous Y–Fe–O films on Si has been reported to yield ‘incomplete crystallization’. Here

it is shown that films produced by standard anneals (e.g.: 800°C

3 min) actually contain yttrium iron garnet (YIG) crystallites in a nanocrystalline non-garnet matrix. During

in situ

TEM laser annealing

a low-temperature pre-anneal enabled subsequent YIG crystallization at velocities of 280 nm/s that prevented the formation of the nanocrystalline matrix. From these results

a two-step rapid thermal anneal was identified (400°C

3 min; 800°C

3 min) that successfully produces phase-pure garnet films on SiO

on Si.

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