In-cascade ionization effects on defect production in 3C silicon carbideFootnote** This manuscript has been authored by UT–Battelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan.

Haizhou Xue; Yanwen Zhang; William J. Weber

doi:10.1080/21663831.2017.1334241

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In-cascade ionization effects on defect production in 3C silicon carbideFootnote** This manuscript has been authored by UT–Battelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan.

Original Report | 更新时间：2026-08-19

- In-cascade ionization effects on defect production in 3C silicon carbideFootnote** This manuscript has been authored by UT–Battelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan.
- Materials Research Letters Vol. 5, Issue 7, Pages: 494-500(2017)
- 作者机构：
  
  1. Department of Materials Science and Engineering University of Tennessee Knoxville
  2. Department of Materials Science and Engineering University of Tennessee Knoxville TN USA
  3. Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2017.1334241
  CLC：
- Online First：05 June 2017，
  
  Published：2017
- 稿件说明：
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Haizhou Xue, Yanwen Zhang, William J. Weber. In-cascade ionization effects on defect production in 3C silicon carbideFootnote** This manuscript has been authored by UT–Battelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan.[J]. Materials Research Letters, 2017, 5(7): 494-500.
DOI：

Haizhou Xue, Yanwen Zhang, William J. Weber. In-cascade ionization effects on defect production in 3C silicon carbideFootnote** This manuscript has been authored by UT–Battelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan.[J]. Materials Research Letters, 2017, 5(7): 494-500. DOI： 10.1080/21663831.2017.1334241.

摘要

Abstract

BSTRACTUnderstanding how energy deposited in electronic and atomic subsystems may affect defect dynamics is a long-standing fundamental challenge in materials research. The coupling of displacement cascades and in-cascade ionization-induced annealing are investigated in silicon carbide (SiC). A delayed damage accumulation under ion irradiation is revealed with a linear dependence as a function of both increasing ionization and increasing ratio of electronic to nuclear energy deposition. An in-cascade healing mechanism is suggested with a low threshold value of elec

tronic energy loss (∼1.0 keV nm

−1

). The in-cascade ionization effects must be considered in predicting radiation performance of SiC.

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DOI：10.1080/21663831.2017.1334241

摘要

Abstract

关键词

Keywords

references