Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

Yao Yao; Serdal Okur; Luke A. M. Lyle; Gary S. Tompa; Tom Salagaj; Nick Sbrockey; Robert F. Davis; Lisa M. Porter

doi:10.1080/21663831.2018.1443978

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Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

Reports | 更新时间：2026-08-19

- Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques
- Materials Research Letters Vol. 6, Issue 5, Pages: 268-275(2018)
- 作者机构：
  
  1. Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh
  2. Structured Materials Industries Inc. Piscataway
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2018.1443978
  CLC：
- Online First：07 March 2018，
  
  Published：2018
- 稿件说明：
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Yao Yao, Serdal Okur, Luke A. M. Lyle, et al. Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques[J]. Materials Research Letters, 2018, 6(5): 268-275.
DOI：

Yao Yao, Serdal Okur, Luke A. M. Lyle, et al. Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques[J]. Materials Research Letters, 2018, 6(5): 268-275. DOI： 10.1080/21663831.2018.1443978.

摘要

BSTRACTHeteroepitaxial films of GaO were grown on

-plane sapphire (0001). The stable phase

-GaO was grown using the metalorganic chemical vapor deposition technique

regardless of precursor flow rates

at temperatures between 500C and 850C. Metastable

- and

-phases were grown when us

ing the halide vapor phase epitaxy (HVPE) technique

at growth temperatures between 650C and 850C

both separately and in combination. XTEM revealed the better lattice-matched

-phase growing semi-coherently on the substrate

followed by

-GaO. The epitaxial relationship was determined to be [

]

-GaO [

]

-GaO [

]

-AlO. SIMS revealed that epilayers forming the

-phase contain higher concentrations of Cl introduced during HVPE growth.

Abstract

BSTRACTHeteroepitaxial films of GaO were grown on

-plane sapphire (0001). The stable phase

-GaO was grown using the metalorganic chemical vapor deposition technique

regardless of precursor flow rates

at temperatures between 500C and 850C. Metastable

- and

-phases were grown when using the halide vapor phase epitaxy (HVPE) technique

at growth temperatures between 650C and 850C

both separately and in combination. XTEM revealed the better lattice-matched

-phase growing semi-coherently on the substrate

followed by

-GaO. The epitaxial relationship was determined to be [

]

-GaO [

]

-GaO [

]

-AlO. SIMS revealed that epilayers forming the

-phase contain higher concentrations of Cl introduced during HVPE growth.

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