Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Gang Niu; Pauline Calka; Peng Huang; Sankaramangalam Ulhas Sharath; Stefan Petzold; Andrei Gloskovskii; Karol Fröhlich; Yudi Zhao; Jinfeng Kang; Markus Andreas Schubert; Florian Bärwolf; Wei Ren; Zuo-Guang Ye; Eduardo Perez; Christian Wenger; Lambert Alff; Thomas Schroeder

doi:10.1080/21663831.2018.1561535

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Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Original Report | 更新时间：2026-08-19

- Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy
- Materials Research Letters Vol. 7, Issue 3, Pages: 117-123(2019)
- 作者机构：
  
  1. IHP Im Technologiepark 25
  2. Institute of Microelectronics Peking University
  3. Institute of Materials Science
  4. Deutsches Elektronen-Synchrotron DESYHamburg,Germany
  5. Institute of Electrical Engineering
  6. Department of Chemistry and 4D LABS Simon Fraser University Burnaby Canada
  7. Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research School of Electronic and Information Engineering Xi’an Jiaotong University
  8. IHP Im Technologiepark 25 Frankfurt Germany
  9. Brandenburgische Technische Universität
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2018.1561535
  CLC：
- Online First：04 January 2019，
  
  Published：2019
- 稿件说明：
移动端阅览
Gang Niu, Pauline Calka, Peng Huang, et al. Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy[J]. Materials Research Letters, 2019, 7(3): 117-123.
DOI：

Gang Niu, Pauline Calka, Peng Huang, et al. Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy[J]. Materials Research Letters, 2019, 7(3): 117-123. DOI： 10.1080/21663831.2018.1561535.

摘要

Abstract

BSTRACTThe HfO

-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based

non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES)

we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface

namely

oxygen migration between HfO

and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM

even in filament-type devices.

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