BSTRACTThe development of fully-inorganic thin flexible materials is important for flexible thermoelectric applications in a wide temperature range

such as harvesting power from hot curved surfaces (e.g. hot pipes). Here

we investigate the thermoelectric properties of a series of ZnO:Ga

Al thin films with varying dopant concentration deposited on flexible mica substrate by atmospheric pressure metalorganic chemical vapor deposition. The films are bendable

while sustaining the high power factor

above 1 × 10

−4

 Wm

−1 

K

−2

for singly doped Zn

0.99

Ga

0.01

O film in a wide temperature range

from room temperature to 400°C.