Low-temperature growth of epitaxial Ti2AlC MAX phase thin films by low-rate layer-by-layer PVD

A. V. Pshyk; E. Coy; M. Kempiński; B. Scheibe; S. Jurga

doi:10.1080/21663831.2019.1594428

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Low-temperature growth of epitaxial Ti2AlC MAX phase thin films by low-rate layer-by-layer PVD

Original Report | 更新时间：2026-08-19

- Low-temperature growth of epitaxial Ti2AlC MAX phase thin films by low-rate layer-by-layer PVD
- Materials Research Letters Vol. 7, Issue 6, Pages: 244-250(2019)
- 作者机构：
  
  1. NanoBioMedical Centre Adam Mickiewicz University
  2. NanoBioMedical Centre Adam Mickiewicz University Poznań Poland
  3. Faculty of Physics Adam Mickiewicz University
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2019.1594428
  CLC：
- Online First：24 March 2019，
  
  Published：2019
- 稿件说明：
移动端阅览
A. V. Pshyk, E. Coy, M. Kempiński, et al. Low-temperature growth of epitaxial Ti2AlC MAX phase thin films by low-rate layer-by-layer PVD[J]. Materials Research Letters, 2019, 7(6): 244-250.
DOI：

A. V. Pshyk, E. Coy, M. Kempiński, et al. Low-temperature growth of epitaxial Ti2AlC MAX phase thin films by low-rate layer-by-layer PVD[J]. Materials Research Letters, 2019, 7(6): 244-250. DOI： 10.1080/21663831.2019.1594428.

摘要

Abstract

BSTRACTHere we report on the structural and tribo-mechanical characterization of epitaxial single-crystalline Ti

AlC MAX phase thin films

grown by means of electron beam physical vapor deposition at relatively low temperature (700°C). The growth of phase pure Ti

AlC at a relatively lower temperature when compared to other PVD methods was achieved utilizing a relatively low deposition rate and layer-by-layer deposition technique. The epitaxial growth is evidenced through the combination of XRD

HR-TEM and Raman spectroscopy measurements. The nanomechanical and micro-scale tribological properties of the Ti

AlC thin films were studied by means of nanoindentation and nanoscratch tests.

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