Hidden spin-polarized bands in semiconducting 2H-MoTe2

R. Oliva; T. Woźniak; F. Dybala; J. Kopaczek; P. Scharoch; R. Kudrawiec

doi:10.1080/21663831.2019.1702113

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Hidden spin-polarized bands in semiconducting 2H-MoTe2

Original Report | 更新时间：2026-08-19

- Hidden spin-polarized bands in semiconducting 2H-MoTe2
- Materials Research Letters Vol. 8, Issue 2, Pages: 75-81(2020)
- 作者机构：
  
  1. Department of Experimental Physics Faculty of Fundamental Problems of Technology Wroclaw University of Science and Technology
  2. Department of Theoretical Physics Faculty of Fundamental Problems of Technology Wroclaw University of Science and Technology
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2019.1702113
  CLC：
- Online First：15 December 2019，
  
  Published：2020
- 稿件说明：
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R. Oliva, T. Woźniak, F. Dybala, et al. Hidden spin-polarized bands in semiconducting 2H-MoTe2[J]. Materials Research Letters, 2020, 8(2): 75-81.
DOI：

R. Oliva, T. Woźniak, F. Dybala, et al. Hidden spin-polarized bands in semiconducting 2H-MoTe2[J]. Materials Research Letters, 2020, 8(2): 75-81. DOI： 10.1080/21663831.2019.1702113.

摘要

Abstract

BSTRACTWe present experimental and theoretical studies of the electronic band structure of 2H-MoTe

at high hydrostatic pressures. Photoreflectance measurements allowed the determination of the pressure coefficient of the direct transitions A and B

which are 2.40(3) and −3.42(18) meV/kbar

respectively. We attribute the sign difference to a strong splitting of the conduction bands with increasing pressure and the presence of hidden spin-polarized states in bulk MoTe

. These results provide direct experimental evidence that the spin–valley locking effect takes place in centrosymmetric transition metal dichalcogenides.

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