R. B. Sills, B. L. Boyce. Void growth by dislocation adsorption[J]. Materials Research Letters, 2020, 8(3): 103-109.
DOI:
R. B. Sills, B. L. Boyce. Void growth by dislocation adsorption[J]. Materials Research Letters, 2020, 8(3): 103-109.DOI: 10.1080/21663831.2019.1702114.
BSTRACTWe propose a dislocation adsorption-based mechanism for void growth in metals
wherein a void grows as dislocations from the bulk annihilate at its surface. The basic process is governed by glide and cross-slip of dislocations at the surface of a void. Using molecular dynamics simulations we show that when dislocations are present around a void
growth occurs more quickly and at much lower stresses than when the crystal is initially dislocation-free. Finally
we show that adsorption-mediated growth predicts an exponential dependence on the hydrostatic stress
consistent with the well-known Rice-Tracey equation.