Epitaxial Cr

2

AlC MAX phase thin films were grown on MgO(111) and Al

2

O

3

(0001) by pulsed laser deposition (PLD) at 600°C. X-ray diffraction and morphology studies of Cr

2

AlC thin films on MgO (111) reveal phase purity

columnar growth

the epitaxial relation Cr

2

AlC(0001) || MgO(111) and Cr

2

AlC [11-20

]

|| MgO[10-1

]

and similar growth behaviour on Al

2

O

3

(0001). Resistivity measurements show semiconductor-like behaviour for 10 and 20 nm thick films

and metallic-like behaviour for thicker films

suggesting a percolation thickness slightly above 20 nm. Our results demonstrate the potential of PLD as a novel method for the growth of epitaxial MAX phase thin films.