Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region

Xueting Zhang; Qing Dong; Zonglun Li; Xiaoling Jing; Ran Liu; Bo Liu; Tingting Zhao; Tao Lin; Quanjun Li; Bingbing Liu

doi:10.1080/21663831.2022.2065893

Chinese

您当前的位置：

首页 >

文章列表页 >

Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region

Original Reports | 更新时间：2026-08-19

- Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region
- Materials Research Letters Vol. 10, Issue 8, Pages: 547-555(2022)
- 作者机构：
  
  1. a State Key Laboratory of Superhard Materials Jilin University
  2. a State Key Laboratory of Superhard Materials Jilin University Changchun People’s Republic of China
  3. b Department of Physics Institute for High Pressure Hanyang University
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2022.2065893
  CLC：
- Online First：22 April 2022，
  
  Published：2022
- 稿件说明：
移动端阅览
Xueting Zhang, Qing Dong, Zonglun Li, et al. Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region[J]. Materials Research Letters, 2022, 10(8): 547-555.
DOI：

Xueting Zhang, Qing Dong, Zonglun Li, et al. Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region[J]. Materials Research Letters, 2022, 10(8): 547-555. DOI： 10.1080/21663831.2022.2065893.

摘要

Abstract

Here

a WS

-based photodetector is fabricated and its detection range is extended to optical communication waveband by pressure. At ambient pressure

exhibits a fast photoelectric response speed (rising/decaying time: 35/49 μs) under 635 nm laser illumination. Upon compression

the responsiveness and external quantum efficiency increase by two orders of magnitude under NIR illumination with different wavelengths as the pressure increases up to 17.2 GPa. The pressure-induced band gap reduction is mainly ascribed to the enhanced S-S interlayer interaction

leading to significant enhancement in the WS

photoresponsiveness. This study paves the way for designing high-performance broadband photodetectors through pressure modification.

IMPACT STATEMENT

Fast photoelectric response speed and extended detection range were achieved in the WS

-based photodetector via pressure modulation

which paves a new way for designing high-performance broadband photodetectors.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Pressure-induced emission and remarkable piezochromism of two-dimensional cesium antimony bromide perovskites

Resolving multiple emissions of zero-dimensional heterometallic halide hybrid via pressure-triggered antenna effect

Pressure-induced enhancement and retainability of optoelectronic properties of NiPS3

Warm white-light emission harvesting with enhanced color rendering index in conventional alloyed CdS0.7Se0.3 quantum dots

Hidden spin-polarized bands in semiconducting 2H-MoTe2

Related Author

Bo Zou

Guanjun Xiao

Qingfeng Dong

Yongguang Li

Dianlong Zhao

Pengfei Lv

Ting Geng

Jiayi Yang

Related Institution

d State Key Laboratory of Supermolecular Structure and Materials College of Chemistry Jilin University

c Key Laboratory of Organosilicon Chemistry and Material Technology Ministry of Education College of Material Chemistry and Chemical Engineering Hangzhou Normal University

b School of Basic Education Beijing Institute of Graphic Communication

a State Key Laboratory of Superhard Materials College of Physics Jilin University

School of Physics Science and Information Technology Shandong Key Laboratory of Optical Communication Science and Technology Liaocheng University

AI问答

Postal code：100079
Tel：（010）53879206 Email：tmw@bjxintong.com.cn
Technical support is provided by Beijing Founder electronics co., LTD 京ICP备09082226号-64 京公网安备11010602201714号
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰