Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation

Eslam Abubakr; Shinya Ohmagari; Abdelrahman Zkria; Hiroshi Ikenoue; Julien Pernot; Tsuyoshi Yoshitake

doi:10.1080/21663831.2022.2083457

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Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation

Original Reports | 更新时间：2026-08-19

- Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation
- Materials Research Letters Vol. 10, Issue 10, Pages: 666-674(2022)
- 作者机构：
  
  1. b Department of Electrical Engineering Faculty of Engineering Aswan University
  2. c Sensing System Research Center National Institute of Advanced Industrial Science and Technology (AIST)
  3. a Department of Advanced Energy Science and Engineering Kyushu University Kasuga Japan
  4. d Department of Physics Faculty of Science Aswan University
  5. e Graduate School of Information Science and Electrical Engineering Kyushu University
  6. f Univ. Grenoble Alpes CNRS Grenoble INP Institut Néel
  7. a Department of Advanced Energy Science and Engineering Kyushu University
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2022.2083457
  CLC：
- Online First：06 June 2022，
  
  Published：2022
- 稿件说明：
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Eslam Abubakr, Shinya Ohmagari, Abdelrahman Zkria, et al. Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation[J]. Materials Research Letters, 2022, 10(10): 666-674.
DOI：

Eslam Abubakr, Shinya Ohmagari, Abdelrahman Zkria, et al. Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation[J]. Materials Research Letters, 2022, 10(10): 666-674. DOI： 10.1080/21663831.2022.2083457.

摘要

Abstract

We report the fabrication of

p-n

diamond homojunction through an innovative approach of laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric conductivity is processed on top of a p-type diamond substrate to form the

p-n

homojunction. The current–voltage measurements at room temperature confirmed high conductivity of the induced n

layer and showed exceptional rectification properties with an ideality factor of 1.07

excellent low on-resistance of 3.7 × 10

−2

Ωcm

and current density over 260 Acm

−2

at forward-biasing of 10 V. Furthermore

undetectable leakage-current provides a rectification ratio exceeding 10

at ±6 V

promoting the junction in UV detection applications.

关键词

Keywords

references

Ohmagari S, Yamada H, Tsubouchi N, et al. Large reduction of threading dislocations in diamond by hot-filament chemical vapor deposition accompanying W incorporations. Appl Phys Lett [Internet]. 2018;113. Available from: doi:https://doi.org/10.1063/1.5040658(open in a new window). (Open in a new window)Google Scholar

Shimaoka T, Koizumi S, Tanaka MM. Diamond photovoltaic radiation sensor using pn junction. Appl Phys Lett [Internet]. 2018;113:1–5. Available from: doi:https://doi.org/10.1063/1.5034413(open in a new window). (Open in a new window)Google Scholar

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