Eliciting stable nanoscale fracture in single-crystal silicon

Frank W. DelRio; Scott J. Grutzik; William M. Mook; Sara M. Dickens; Paul G. Kotula; Eric D. Hintsala; Douglas D. Stauffer; Brad L. Boyce

doi:10.1080/21663831.2022.2088251

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Eliciting stable nanoscale fracture in single-crystal silicon

Original Reports | 更新时间：2026-08-19

- Eliciting stable nanoscale fracture in single-crystal silicon
- Materials Research Letters Vol. 10, Issue 11, Pages: 728-735(2022)
- 作者机构：
  
  1. a Sandia National Laboratories Albuquerque
  2. b Bruker Nano Surfaces & Metrology Eden Prairie
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2022.2088251
  CLC：
- Online First：29 June 2022，
  
  Published：2022
- 稿件说明：
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Frank W. DelRio, Scott J. Grutzik, William M. Mook, et al. Eliciting stable nanoscale fracture in single-crystal silicon[J]. Materials Research Letters, 2022, 10(11): 728-735.
DOI：

Frank W. DelRio, Scott J. Grutzik, William M. Mook, et al. Eliciting stable nanoscale fracture in single-crystal silicon[J]. Materials Research Letters, 2022, 10(11): 728-735. DOI： 10.1080/21663831.2022.2088251.

摘要

Abstract

In this letter

we demonstrated stable nanoscale fracture in single-crystal silicon using an in-situ wedge-loaded double cantilever beam (DCB) specimen. The fracture toughness

was calculated directly from instrumented measurement of force and displacement via finite element analysis with frictional corrections. Measurements on multiple test specimens were used to show

= 0.72 ± 0.07 MPa m

1/2

on {111} planes and observe the crack-growth resistance curve in 500 nm increments. The exquisite stability of crack growth

instrumented measurement of material response

and direct visual access to observe nanoscale fracture processes in an ideally brittle material differentiate this approach from prior DCB methods.

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Related Institution

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