Harnessing defects for high-performance MoS2 tunneling field-effect transistors

Juan Lyu; Jian Gong; HuangLong Li

doi:10.1080/21663831.2022.2145921

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Harnessing defects for high-performance MoS2 tunneling field-effect transistors

Original Reports | 更新时间：2026-08-19

- Harnessing defects for high-performance MoS2 tunneling field-effect transistors
- Materials Research Letters Vol. 11, Issue 4, Pages: 266-273(2023)
- 作者机构：
  
  1. a School of Physical Science and Technology Inner Mongolia University
  2. b Department of Precision Instrument Center for Brain Inspired Computing Research Tsinghua University
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2022.2145921
  CLC：
- Online First：16 November 2022，
  
  Published：2023
- 稿件说明：
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Juan Lyu, Jian Gong, HuangLong Li. Harnessing defects for high-performance MoS2 tunneling field-effect transistors[J]. Materials Research Letters, 2023, 11(4): 266-273.
DOI：

Juan Lyu, Jian Gong, HuangLong Li. Harnessing defects for high-performance MoS2 tunneling field-effect transistors[J]. Materials Research Letters, 2023, 11(4): 266-273. DOI： 10.1080/21663831.2022.2145921.

摘要

Abstract

BSTRACTThe two-dimensional (2D) materials-based tunneling field-effect transistors (TFETs) suffer from low driving currents. In contrast to the prevailing wisdom that defects are detrimental

we proposed to harness the ubiquitous defects in MoS

to overcome the problem of the low on-state current in TFET. The existence of certain molybdenum-related vacancies and sulfur vacancy in appropriate positions confers the higher driving currents without compromising the low-power benefits. Such performance enhancements are related to the defect-assisted resonant Zener tunneling mechanism introduced by the mid-gap states of the vacancy defects. These unveiled hidden defect benefits could provide new opportunities for boosting the performance of 2D TFETs.

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