Quaternary diborides—improving the oxidation resistance of TiB2 ± z coatings by disilicide alloying

Ahmed Bahr; Oskar Beck; Thomas Glechner; Alexander Grimmer; Tomasz Wojcik; Philip Kutrowatz; Jürgen Ramm; Oliver Hunold; Szilard Kolozsvári; Peter Polcik; Eleni Ntemou; Daniel Primetzhofer; Helmut Riedl

doi:10.1080/21663831.2023.2225554

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Quaternary diborides—improving the oxidation resistance of TiB2 ± z coatings by disilicide alloying

Report | 更新时间：2026-08-19

- Quaternary diborides—improving the oxidation resistance of TiB2 ± z coatings by disilicide alloying
- Materials Research Letters Vol. 11, Issue 9, Pages: 733-741(2023)
- 作者机构：
  
  1. a Christian Doppler Laboratory for Surface Engineering of high-performance Components TU Wien
  2. b Oerlikon Balzers Oerlikon Surface Solutions AG
  3. c Plansee Composite Materials GmbH
  4. d Department of Physics and Astronomy Uppsala University
  5. a Christian Doppler Laboratory for Surface Engineering of high-performance Components TU Wien Vienna Austria
  6. e Institute of Materials Science and Technology TU Wien
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2023.2225554
  CLC：
- Online First：26 June 2023，
  
  Published：2023
- 稿件说明：
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Ahmed Bahr, Oskar Beck, Thomas Glechner, et al. Quaternary diborides—improving the oxidation resistance of TiB2 ± z coatings by disilicide alloying[J]. Materials Research Letters, 2023, 11(9): 733-741.
DOI：

Ahmed Bahr, Oskar Beck, Thomas Glechner, et al. Quaternary diborides—improving the oxidation resistance of TiB2 ± z coatings by disilicide alloying[J]. Materials Research Letters, 2023, 11(9): 733-741. DOI： 10.1080/21663831.2023.2225554.

摘要

To overcome the limited oxidation resistance of the emerging class of transition metal borides

we suggest within this study novel quaternary diborides

Ti-TM-Si-B

2 ± z

(TM = Ta

Mo)

achieving the compromise between excellent oxidation resistance and requirements of hard coatings. Single-ph

ase AlB

-type structured Ti-TM-Si-B

2 ± z

films (3–5 µm) are sputter-deposited from TiB

/TMSi

targets. The Ti-Ta-Si-B

2 ± z

coatings exhibit 36 GPa in hardness

while maintaining strongly retarded oxidation kinetics till 1000°C. Ti-Mo-Si-B

2 ± z

coatings preserve a hardness up to 27 GPa

although outperforming all their counterparts by featuring outstanding oxidation resistance with 440 nm oxide scale thickness after 1 h at 1200°C.

Abstract

To overcome the limited oxidation resistance of the emerging class of transition metal borides

we suggest within this study novel quaternary diborides

Ti-TM-Si-B

2 ± z

(TM = Ta

Mo)

achieving the compromise between excellent oxidation resistance and requirements of hard coatings. Single-phase AlB

-type structured Ti-TM-Si-B

2 ± z

films (3–5 µm) are sputter-deposited from TiB

/TMSi

targets. The Ti-Ta-Si-B

2 ± z

coatings exhibit 36 GPa in hardness

while maintaining strongly retarded oxidation kinetics till 1000°C. Ti-Mo-Si-B

2 ± z

coatings preserve a hardness up to 27 GPa

although outperforming all their counterparts by featuring outstanding oxidation resistance with 440 nm oxide scale thickness after 1 h at 1200°C.

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