Study on Process Parameters of Chemical Mechanical Polishing of Easily Cleaved ScAlMgO4 Wafer

倪自丰; 季明捷; 陈国美; 张海涛; 李俊杰; 卞达; 钱善华

doi:10.13433/j.cnki.1003-8728.20230214

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Study on Process Parameters of Chemical Mechanical Polishing of Easily Cleaved ScAlMgO4 Wafer

更新时间：2026-04-23

- Study on Process Parameters of Chemical Mechanical Polishing of Easily Cleaved ScAlMgO4 Wafer
- Mechanical Science and Technology for Aerospace Engineering Vol. 44, Issue 3, Pages: 477-483(2025)
- 作者机构：
  
  1. 江南大学机械工程学院,江苏,无锡,214122
  2. 江苏省微纳增减材制造工程研究中心,江苏,无锡,214122
  3. 无锡商业职业技术学院机构机电技术学院,江苏,无锡,214153
  4. 无锡吴越半导体有限公司,江苏,无锡,214115
- 作者简介：
- 基金信息：
- DOI：10.13433/j.cnki.1003-8728.20230214
  CLC：
- Published：2025
- 稿件说明：
移动端阅览
倪自丰, 季明捷, 陈国美, et al. Study on Process Parameters of Chemical Mechanical Polishing of Easily Cleaved ScAlMgO4 Wafer[J]. Mechanical Science and Technology for Aerospace Engineering, 2025, 44(3): 477-483.
DOI：

倪自丰, 季明捷, 陈国美, et al. Study on Process Parameters of Chemical Mechanical Polishing of Easily Cleaved ScAlMgO4 Wafer[J]. Mechanical Science and Technology for Aerospace Engineering, 2025, 44(3): 477-483. DOI： 10.13433/j.cnki.1003-8728.20230214.

摘要

为探究化学机械抛光过程中工艺参数对铝酸镁钪晶片抛光效果的影响，该文研究了抛光压力、抛光盘转速和抛光液流量3个工艺参数在化学机械抛光过程中对晶片表面材料去除的作用规律。结果表明：适当提高抛光压力、抛光盘转速和抛光液流量有利于提高晶片的材料去除率和表面质量，其中抛光压力的影响最大，抛光盘转速次之，抛光液流量最小。此外，过高的抛光压力会导致晶片表面材料发生解理并出现片状剥离。因此，选择抛光压力0.2 kg/cm2、抛光盘转速70 r/min、抛光液流量200 mL/min作为抛光工艺参数，铝酸镁钪晶片的材料去除率达到了5.73 µm/h，且表面粗糙度值仅为1.49 nm，实现了高材料去除率的同时获得了高质量晶片表面。

Abstract

In order to study the influence of the process parameters on the chemical mechanical polishing results of ScAlMgO4 wafer

the effects of the polishing pressure

speed of pad and flow rate of slurry was studied. The results show that the proper increase in polishing pressure

speed of pad and flow rate of slurry is beneficial to improve the material removal rate and surface quality of the wafer

and the polishing pressure has the greatest influence

followed by the speed of pad and flow rate of slurry. In addition

too high polishing pressure will lead to surface material cleave and flake peeling. Therefore

the polishing process parameters of 0.2 kg/cm2

70 r/min and 200 mL/min were chosen

and ScAlMgO4 wafer achieved a high material removal rate of 5.73 µm/h and a surface roughness value of only 1.49 nm

realizing a high quality wafer surface with a high material removal rate.

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