Zn2+浓度对Zn:Ce:Cu:LiNbO3晶体缺陷结构的影响

WANG Lu-ping; DAI Li; HAN Xian-bo; SHAO Yu

doi:10.15938/j.jhust.2019.01.017

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Zn2+浓度对Zn:Ce:Cu:LiNbO3晶体缺陷结构的影响

更新时间：2026-08-31

- Zn2+浓度对Zn:Ce:Cu:LiNbO3晶体缺陷结构的影响
- Vol. 24, Issue 1, Pages: 103-107(2019)
- 作者机构：
  
  1. 哈尔滨理工大学材料科学与工程学院
  2. 
  3. 哈尔滨理工大学理学院,哈尔滨,150080
- 作者简介：
- 基金信息：
- DOI：10.15938/j.jhust.2019.01.017
  CLC： TP3334
- Published：2019
- 稿件说明：
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WANG Lu-ping, DAI Li, HAN Xian-bo, et al. Zn2+浓度对Zn:Ce:Cu:LiNbO3晶体缺陷结构的影响[J]. 2019, 24(1): 103-107.
DOI：

WANG Lu-ping, DAI Li, HAN Xian-bo, et al. Zn2+浓度对Zn:Ce:Cu:LiNbO3晶体缺陷结构的影响[J]. 2019, 24(1): 103-107. DOI： 10.15938/j.jhust.2019.01.017.

摘要

摘要:采用单晶提拉法生长了不同Zn2+(1

7 mol%)离子浓度的Zn:Ce:Cu:LiNbO3单晶，为了研究Zn2+离子浓度对Zn:Ce:Cu:LiNbO3单晶缺陷结构的影响，采用光致散射光强阈值方法来测定晶体的抗光损伤能力，用电感耦合等离子原子发射光谱(ICPAES)测试Zn:Ce:Cu:LiNbO3晶体中不同掺杂离子的有效分凝系数。试验结果表明：随着晶体中掺杂Zn2+离子浓度的增加，晶体的抗光损伤能力增强，Zn2+离子分凝系数随着晶体中Zn2+浓度增加呈现先升高后降低的趋势，在Zn2+浓度为5mol%时达到最高点；Ce3+和Cu2+离子的分凝系数随着Zn2+离子浓度的增加逐渐降低，结合LiNbO3晶体的占位机制和锂空位缺陷解释了相关实验结果。

Abstract

Abstract:A series of Zn:Ce:Cu:LiNbO3crystals doped with Zn2+(1

7 mol%) were grown by the Czochralski method from the congruent melt Inorder to study the influence of Zn2 +ion concentration to the defect structureof Zn: Ce: Cu: LiNbO3 single crystal

we choose lightinduced scatteringexperiment to measure the optical damage resistance ability of theZn:Ce:Cu:LiNbO3crystal The effective segregation coefficient of doped ions ofZn:Ce:Cu:LiNbO3crystals were measured by inductively coupled plasmaatomicemission spectrum(ICPAES) It was found that the optical damage resistanceability enhanced with increasing of ZnO concentration in the melt and effectivesegregation coefficient of Zn2+will increased with increasing of ZnOconcentration in the melt at first

which reach to the climax when the doped Zn2+concentrationis 5mol%

then it decreased The effective segregation coefficient of Ce3+and Cu2+willdecreased with increasing of ZnO concentration in the melt The experimentalwere analyzed based on the Livacancy defect model

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