The Preparation of the ZnPc/PbPc Hybrid Vapor Deposition Thin Film Diode

ZHAO Shuang; ZHU Min

doi:10.15938/j.jhust.2019.03.022

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The Preparation of the ZnPc/PbPc Hybrid Vapor Deposition Thin Film Diode

更新时间：2026-08-31

- The Preparation of the ZnPc/PbPc Hybrid Vapor Deposition Thin Film Diode
- Vol. 24, Issue 3, Pages: 134-137(2019)
- 作者机构：
  
  哈尔滨理工大学理学院（教育部工程电介质重点实验室）,黑龙江,哈尔滨,150080
- 作者简介：
- 基金信息：
- DOI：10.15938/j.jhust.2019.03.022
  CLC： TN311+5
- Published：2019
- 稿件说明：
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ZHAO Shuang, ZHU Min. The Preparation of the ZnPc/PbPc Hybrid Vapor Deposition Thin Film Diode[J]. 2019, 24(3): 134-137.
DOI：

ZHAO Shuang, ZHU Min. The Preparation of the ZnPc/PbPc Hybrid Vapor Deposition Thin Film Diode[J]. 2019, 24(3): 134-137. DOI： 10.15938/j.jhust.2019.03.022.

摘要

有机薄膜二极管选取酞菁锌和酞菁铅(ZnPc和PbPc)进行混合作为器件的有源层，利用多种镀膜方式，制备了结构为Cu/ ZnPc+ PbPc/ Al的器件，其中，ZnPc∶PbPc混合的质量比分别为1∶1、4∶5和5∶4，对二极管进行了输出特性测试和混合薄膜的吸收光谱测试。结果表明，3种混合方式的二极管均具有整流特性。通过实验分析可以得出：ZnPc∶PbPc的混合质量比为1∶1的器件的载流子的传输最快。实验结果表明：适当的ZnPc∶PbPc的混合质量比可以降低肖特基势垒的高度，从而使载流子的迁移率加大。由实验结果计算得出，ZnPc∶PbPc的混合质量比为1∶1的器件的势垒高度为0.355eV，影响因子n为18.21。

Abstract

Organic thin film diode selected zinc phthalocyanine andplumbum phthalocyanine (ZnPc and PbPc) were mixed as the active layer of thedevice. The hybrid thin film diodes structure of Cu/ ZnPc+ PbPc/ Al wasprepared using a variety of coating methods

among them

the mass ratio of ZnPc∶PbPcwas 1∶1

4∶5 and 5∶4

respectively. The electrical tests and optical tests were carried out. Theresults show that three types of the hybrid thin film diodes have a rectifyingcharacteristic. Through the experimental analysis

it can be concluded thatwhen the mass ratio of the two materials is 1∶1

the carrier transport of the device is the fastest

and the appropriate contentof PbPc can reduce the height of the Schottky barrier

thus the carriermobility increasing. It is calculated that when the mass ratio of the twomaterials is 1∶1

the barrier height of the device is0.355eV

the influence factor is 18.21.

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