Design of precise driving circuit for dual-wavelength semiconductor lasers

Tang Zhiping; Ma Yuxin; Song Changkun; Gao Junjian; Li Pu; Qin Yuwen; Wang Yuncai

doi:10.3788/gzxb20265507.0714002

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Design of precise driving circuit for dual-wavelength semiconductor lasers

更新时间：2026-06-10

- Design of precise driving circuit for dual-wavelength semiconductor lasers
- Acta Photonica Sinica Pages: 1-12(2026)
- 作者机构：
  
  1.1）先进光子技术研究院，信息工程学院，广东工业大学，广州，中国， 510006
  2.2）通感融合光子技术教育部重点实验室，广东工业大学，广州，中国， 510006
  3.3）广东省信息光子技术重点实验室，广东工业大学，广州，中国， 510006
- 作者简介：
- 基金信息：
- DOI：10.3788/gzxb20265507.0714002
  CLC： TN248.4;TN710
- CSTR：32255.14.gzxb20265507.0714002
- Received：28 January 2026，
  
  Revised：2026-02-04，
  
  Accepted：05 February 2026，
- 稿件说明：
移动端阅览
唐治平，马雨心，宋长坤，等. 双波长半导体激光器驱动电路设计与实现［J］.光子学报，2026，55（7）：0714002

Tang Zhiping， Ma Yuxin， Song Changkun， et al. Design of precise driving circuit for dual-wavelength semiconductor lasers［J］. Acta Photonica Sinica， 2026， 55（7）：0714002
唐治平，马雨心，宋长坤，等. 双波长半导体激光器驱动电路设计与实现［J］.光子学报，2026，55（7）：0714002 DOI： 10.3788/gzxb20265507.0714002. CSTR： 32255.14.gzxb20265507.0714002.

Tang Zhiping， Ma Yuxin， Song Changkun， et al. Design of precise driving circuit for dual-wavelength semiconductor lasers［J］. Acta Photonica Sinica， 2026， 55（7）：0714002 DOI： 10.3788/gzxb20265507.0714002. CSTR： 32255.14.gzxb20265507.0714002.

摘要

为实现双波长半导体激光器对温度与电流的高精度稳定控制，设计了一种基于AD8531和SLM8835的驱动电路。本方案以STM32为主控单元，通过电压跟随器作为缓冲级抑制电压噪声，结合比例-积分-微分网络参数优化提升了同步控制驱动电流与温控的稳定度。测试结果表明，在25 ℃室温条件下，针对驱动电流为50 mA的双波长激光器，本电路所提供的两路驱动电流在120分钟内的稳定度分别达到0.013%与0.019%，对应激光器输出中心波长漂移小于± 0.006 nm。该电路有效确保了双波长半导体激光器的输出稳定性，为其在精密光学系统中的集成应用提供了高稳定度的驱动方案。

Abstract

Dual-wavelength semiconductor lasers are indispensable in critical fields such as radar， microwave photonics， and optical sensing， where stable spectral performance is paramount. Tr

aditional dual-wavelength systems rely on two discrete laser devices， which suffer from poor stability due to temperature fluctuations and environmental vibrations， limiting their practicality in compact， high-precision applications. Monolithic integrated dual-wavelength semiconductor lasers address this drawback with a compact structure and enhanced operational stability， but their gain media are extremely temperature-sensitive. Even minor temperature variations can significantly alter lasing wavelength and threshold current， while subtle fluctuations in driving current lead to substantial output power changes and wavelength drift. Consequently， high-precision synchronous control of both operating temperature and driving current is critical for ensuring the reliable performance of dual-wavelength semiconductor lasers. Existing solutions predominantly use discrete commercial components， resulting in large volumes and high power consumption that conflict with the miniaturization and integration demands of modern laser systems. Moreover， most conventional circuits are designed for single-section lasers， failing to simultaneously meet the dual high-precision requirements of dual-wavelength devices， creating an urgent need for a dedicated integrated driving solution.This study designs a highly integrated driving circuit tailored for dual-wavelength semiconductor lasers， with the STM32F103RCT6 microcontroller as the core control unit. The system employs a Digital-to-Analog Converter （DAC） to independently regulate the driving current and Thermoelectric Cooler （TEC） voltage， realizing synchronous high-precision control in a unified architecture. Two identical current driving channels are adopted to power the monolithically integrated semiconductor lasers （DFB

and DFB

）， which have threshold currents of 11.9 mA and 12.7 mA respectively. The MCP4922 DAC chip features 12-bit resolution， 4.5 μs settling time， and SPI communication—converts digital control signals from the STM32 into analog voltages，

which are buffered by the AD8065 voltage follower to enhance load capacity and isolate inter-stage interference. The AD8531 operational amplifier forms the core of the current source， supporting a linear adjustable current range of 0 ~ 250 mA with a resolution of 0.06 mA； four parallel resistors are used to disperse current， reduce thermal dissipation， and improve resistance stability. For temperature control， the SLM8835 chip serves as the core， integrating linear and pulse width modulation power stages to drive the TEC with a maximum output current of 3 A. A closed-loop control system is formed with a negative temperature coefficient thermistor， and the built-in operational amplifiers of the SLM8835 handle weak temperature signal amplification and PID compensation， with optimized component parameters （R

=510 kΩ， R

=1 MΩ， C

=0.47 μF， R

=510 kΩ， C

=10 μF， C

=0.01 μF） to ensure precise temperature regulation. The PCB adopts a four-layer structure （top signal， bottom signal， ground and power layers） with large-area copper cladding to suppress electromagnetic interference， and software-based delayed power-on/off control protects the laser and LNA-PD （model AMD0020） by adjusting current at a rate of 1 mA per 0.5 s， preventing damage from abrupt current changes or premature optical signal exposure.Experimental tests were conducted under standard operating conditions （25 ℃ temperature， 50 mA driving current） using professional equipment： the Keysight B2912B precision source meter for current stability measurements and the Anritsu MS9740B optical spectrum analyzer for wavelength monitoring. Results show that the two current channels achieve stabilities of 0.013% and 0.019% over 120 minutes， with fluctuation amplitudes of 0.0065 mA and 0.0095 mA respectively-both outperforming the typical 0.020% stability threshold. For wavelength stability， the central wavelengths of DFB

and DFB

vary within 1553.622 ~ 1553.633 nm and 1552.512 ~ 155

2.524 nm over 120 minutes， with drift amplitudes of ± 0.0060  nm and ± 0.0055  nm， and standard deviations of 0.0015 nm and 0.0014 nm.When both lasers are driven simultaneously， the output spectrum exhibits a Side-Mode Suppression Ratio （SMSR） of 37.81 dB， exceeding the commonly accepted 30 dB threshold for stable lasing. Throughout the continuous 120 minute test， the output spectrum remained stable without significant drift or degradation， confirming reliable dual-wavelength performance.This study presents a high-performance integrated driving circuit that effectively addresses the key challenges of dual-wavelength semiconductor laser control. The circuit achieves precise regulation of driving current and temperature， with exceptional stability in both parameters. Its compact integrated design overcomes the limitations of bulky discrete solutions， aligning with the miniaturization and integration demands of modern laser systems. By ensuring minimal wavelength drift and high SMSR， the circuit guarantees the stable operation of dual-wavelength lasers， which is critical for their integration into precision optical systems. This work advances high-precision laser driving technology， broadens the practical application prospects of dual-wavelength semiconductor lasers in cutting-edge fields such as radar and microwave photonics， and provides a reliable technical foundation for their wider adoption in high-performance optical systems. The compatibility with butterfly-packaged lasers and integrated photoelectric conversion functions further enhances its practical value， making it a versatile solution for diverse precision optical applications.

关键词

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