This paper firstly introduced a new effect

meso-piezoresistive effect

analysed the strain on _//_ double-barrier resonant tunneling structure along the axis director; then computed the influence of the barrier width and height from the axial strain

used Matlab as tool simulate the transmission coefficient and tunneling electric current. Finally we find the strain can make the electric current increase linearly

the velocity of increase differ with different voltage. It offers a theory basis for devising resonant tunneling devices.