TSV-based packaging technology is a kind of high-end technology currently used in MEMS

memory and three-dimensional integrated circuits.This article discusses the TSV-based CIS chip wafer level packaging process which is in the mass production phase and in a leading position in our country.The emphasis of this work focuses on the theoretical and experimental investigations of executing aluminum etching and photoresist removal before metallic coating

and the induced Ni-breeding problem.It is found that the new process flow can shorten the time of photoresist removal

decrease the residua of photoresist and reduce the number of layers of metallic coating.Extending UPW rinse time in electroplating process each time

avoiding forming Nickel particles in plating solution in EN Ni.Lowering zinc concentration when zinc plating and increase nitric acid cleaning steps therefore circumvent the problem of Ni-breeding.The results are helpful to improve the efficiency

increase the passing rate of the chips greatly and reduce the costs.