The characteristic of the radiation effect of the 0. 13μm partially depleted SOI technology is researched in this paper. First

the sensitive area of the device in single event upset is studied through 3D simulation

and then the devices total ionizing dose (TID) effect is analyzed by experiments. The 3D simulation explored the parasitic bipolar effect and the charge collection of the SOI NMOS devices in case of different strike locations

and showed that both the strikes at the body and drain area could cause relatively great charge collection. The simulation on the SEU of SRAM cell also showed that both the body and reverse-biased drain are sensitive areas to SEU. The result of the TID experiments showed that

the OFF bias state is worse than the TG state for the buried oxide in the device of this technology.