一种DC-6 GHz的GaAs PHEMT宽带低插入损耗单刀双掷开关

刘宇辙; 梁晓新; 万晶; 阎跃鹏

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一种DC-6 GHz的GaAs PHEMT宽带低插入损耗单刀双掷开关

更新时间：2026-09-04

- 一种DC-6 GHz的GaAs PHEMT宽带低插入损耗单刀双掷开关
- A DC-6 GHz GaAs PHEMT Wideband Low Insertion Loss SPDT RF Switch
- 微电子学与计算机 2016年33卷第3期页码：1-5
- 作者机构：
  
  中国科学院机构微电子研究所,北京,100029
- 作者简介：
- 基金信息：
  
  国家科技重大专项 2013ZX0300600F002
- DOI：
  中图分类号：
- 纸质出版：2016
- 稿件说明：
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刘宇辙, 梁晓新, 万晶, 阎跃鹏. 一种DC-6 GHz的GaAs PHEMT宽带低插入损耗单刀双掷开关[J]. 微电子学与计算机, 2016, 33(3): 1-5, 10.

LIU Yu-zhe, LIANG Xiao-xin, WAN Jing, et al. A DC-6 GHz GaAs PHEMT Wideband Low Insertion Loss SPDT RF Switch[J]. 2016, 33(3): 1-5.
刘宇辙, 梁晓新, 万晶, 阎跃鹏. 一种DC-6 GHz的GaAs PHEMT宽带低插入损耗单刀双掷开关[J]. 微电子学与计算机, 2016, 33(3): 1-5, 10. DOI：

LIU Yu-zhe, LIANG Xiao-xin, WAN Jing, et al. A DC-6 GHz GaAs PHEMT Wideband Low Insertion Loss SPDT RF Switch[J]. 2016, 33(3): 1-5. DOI：

摘要

利用稳懋0.5 μm GaAs PHEMT工艺设计了一款宽带低插入损耗的单刀双掷(SPDT)开关芯片.该开关在传统串并联结构的基础上

考虑了封装引入的键合线电感效应

并利用键合线电感

优化了开关的射频性能.同时分析了串并联结构开关的功率容量与偏置点的关系

把开关偏置在最佳偏置点

能显著提升功率容量.所设计的开关

在DC-6 GHz范围内

插入损耗小于0.55 dB

隔离度大于24 dB.在(-7.5 V/7.5 V)控制电压下

输入1 dB压缩点大于34 dBm

可用于6 GHz频率范围内的各种应用.提出的利用键合线提升开关射频性能的思想

可用于指导开关及其封装的设计.

Abstract

This paper presents a wideband low insertion loss single pole double throw switch using Win 0.5 μm GaAs PHEMT process. This switch adopts traditional series-shunt configuration

and take advantage of bonding wire inductor to improve the performance of the switch. Then analyze the relationship between the power capacity and the bias point. With proper bias point

the power capacity of the switch can be enhanced. The designed switch shows good measured performance: in the DC-6 GHz frequency range

the insertion loss is less than 0.55 dB

the isolation is better than 24 dB. when the switch is biased under -7.5 V/7.5 V condition

the input 1 dB compression point is 34 dBm. The designed switch may be used under 6 GHz application. The concept of taking advantage of bonding wire to enhance the performance of the switch may be applied to switch and package design.

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references

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