面向近亚阈值的标准单元库设计方法

商新超; 袁甲; 张福海

Chinese

您当前的位置：

首页 >

文章列表页 >

面向近亚阈值的标准单元库设计方法

更新时间：2026-09-04

- 面向近亚阈值的标准单元库设计方法
- The Design Method of Sub-threshold Standard Cell Library
- 微电子学与计算机 2016年33卷第3期页码：11-14
- 作者机构：
  
  1. 南开大学电子与光学工程学院,天津,300071
  2. 中国科学院机构微电子研究所,北京,100029
- 作者简介：
- 基金信息：
  
  国家自然科学基金 61306039
- DOI：
  中图分类号：
- 纸质出版：2016
- 稿件说明：
移动端阅览
商新超, 袁甲, 张福海. 面向近亚阈值的标准单元库设计方法[J]. 微电子学与计算机, 2016, 33(3): 11-14.

SHANG Xin-chao, YUAN Jia, ZHANG Fu-hai. The Design Method of Sub-threshold Standard Cell Library[J]. 2016, 33(3): 11-14.
商新超, 袁甲, 张福海. 面向近亚阈值的标准单元库设计方法[J]. 微电子学与计算机, 2016, 33(3): 11-14. DOI：

SHANG Xin-chao, YUAN Jia, ZHANG Fu-hai. The Design Method of Sub-threshold Standard Cell Library[J]. 2016, 33(3): 11-14. DOI：

摘要

由于商用标准单元无法支持在极低电压下工作

为使数字电路能够工作其最优能耗点

采用smic130 nm CMOS工艺

对近/亚阈值电压下标准单元库的设计方法展开研究

定制了近/亚阈值的标准单元库.测试结果显示

所有库单元能够正常工作的电源电压低于90 mV.为了进一步验证定制标准单元库的稳定性

我们提出了一个4×8的FIR滤波器

测试芯片选择了130 nm的CMOS工艺进行流片

测试结果显示时钟频率为100 Hz时

最低能耗点的工作电压为0.25 V

能耗是150 nJ/cycle

芯片的最低工作电压为0.18 V.

Abstract

Because of commercial standard cell library cantoperate at ultra low supply voltages

in order to make the digital circuits operate at the minimum energy point

we selected 130 nm CMOS technology and investigated the design method of Sub-threshold standard cell library. Measurements show that all of the cells in the library operate at voltage below 90 mv. In order to father validate the stability of sub-threshold standard cell library

We presented an 4×8 process FIR filter

a test chip has been implemented in a selected 130 nm CMOS technology

and measurements show that the minimum energy operating point is at 0.25 V

consuming 150 nJ with the clock frequency of 100 Hz

the minimum voltage supply for the chip is 0.18 V.

关键词

Keywords

references

Calhoun B, Chandrakasan A. Characterizing and modeling minimum energy operation for subthreshold circuits[C]// International Symposium on Low-Power Electronics and Design (ISLPED) Digest of Technical Papers. California, USA, 2004: 90-95.

Bol D, Vos J, Hocquet C. Sleep Walker: a 25 MHz 0.4 V Sub-mm2 7 uW/MHz microcontroller in 65 nm LP-GP CMOS for low-carbon wireless sensor modes[J]. IEEE J. Solid-State Circuits, 2013, 48(1): 115-126. DOI: 115

New York Wang A, Calhoun B H, Chandrakasan A. Sub-threshold design for ultra low-power systems[M]. New York: Springer, 2006.

Qian Xie, Jun Xu, Yuan Taur. Review and critique of analytic models of MOSFET short-channel effects in subthreshold[J]. IEEE Transactions on electron devices, 2012, 59(6): 1569-1579. DOI: 1569

Wang A, Chandrakasan A. A 180 mV subthreshold FFT processor using a minimum energy design methodology[J]. IEEE J. Solid-State Circuits, 2005, 40(1): 310-319. DOI: 310

Wang A, Chandrakasan A. A 180 mV FFT processor using sub-threshold circuit techniques[C]// IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. USA, San Francisco, 2004: 292-293.

Calhoun B H, Wang A, Chandrakasan A. Modeling and sizing for minimum energy operation in subthreshold circuits[J]. IEEE J. Solid-State Circuits, 2005, 40(9): 1778-1786. DOI: 1778

Kwong J, Chandrakasan A. Variation-driven device sizing for minimum energy sub-threshold circuits[C]// Proc. Int. Symp. Low-Power. Electronics Design. USA, New York, 2006: 8-13.

Kwong J, Ramadass Y, Verma N. A 65nm sub-Vt microcontroller with integrated SRAM and switched capacitor DC-DC converter[J]. IEEE J. Solid-State Circuits, 2009, 44(1): 115-126. DOI: 115

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

一种基于特征上下文理解与切片分析的肺结核检测算法

V型沟槽SiC中子探测器的蒙特卡洛分析

基于改进RT-DETR的航拍小目标检测算法

AlN/GaN混合缓冲层双异质结p-GaN HEMT直流特性仿真

一种用于极低压boost系统的高效率电荷泵