MEMS谐振器中高增益跨阻放大器设计

谢勇; 来强涛; 陈华; 姜宇; 郭桂良; 阎跃鹏

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MEMS谐振器中高增益跨阻放大器设计

更新时间：2026-09-04

- MEMS谐振器中高增益跨阻放大器设计
- A High Gain CMOS Transimpedance Amplifier for Disc-Like MEMS Oscillators
- 微电子学与计算机 2016年33卷第3期页码：46-50
- 作者机构：
  
  中国科学院机构微电子技术研究所,北京,100029
- 作者简介：
- 基金信息：
  
  国家自然科学基金 61234007
- DOI：
  中图分类号：
- 纸质出版：2016
- 稿件说明：
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谢勇, 来强涛, 陈华, 姜宇, 郭桂良, 阎跃鹏. MEMS谐振器中高增益跨阻放大器设计[J]. 微电子学与计算机, 2016, 33(3): 46-50, 55.

XIE Yong, LAI Qiang-tao, CHEN Hua, et al. A High Gain CMOS Transimpedance Amplifier for Disc-Like MEMS Oscillators[J]. 2016, 33(3): 46-50.
谢勇, 来强涛, 陈华, 姜宇, 郭桂良, 阎跃鹏. MEMS谐振器中高增益跨阻放大器设计[J]. 微电子学与计算机, 2016, 33(3): 46-50, 55. DOI：

XIE Yong, LAI Qiang-tao, CHEN Hua, et al. A High Gain CMOS Transimpedance Amplifier for Disc-Like MEMS Oscillators[J]. 2016, 33(3): 46-50. DOI：

摘要

微机械(MEMS)圆盘谐振器的振荡器具有相位噪声低

抖动小

温漂小等特点.采用TSMC 0.18 μm CMOS工艺设计实现了一款用于驱动MEMS圆盘谐振器的高增益、低噪声和低功耗跨阻放大器.该放大器采用低功耗宽带电流预放大和电流电压转换级输入技术

结合基于Cherry-Hooper反相器电压放大的电路结构

实现了增益、带宽、噪声、低电源电压和动态范围等指标间的折衷

成功驱动了MEMS圆盘谐振器.Spectre仿真表明

单端跨阻增益高达115 dBΩ

-3 dB带宽超过500 MHz

等效输入噪声电流平均值为25 pA/

功耗仅为17.6 mW

芯片面积(包括所有PAD)为620 μm×620 μm.

Abstract

Disc-Like MEMS oscillators are compared with quartz crystal oscillator counter parts in terms of phase-noise

jitter

and temperature stability. Base on these characteristics

a high gain

low noise and low power transimpedance amplifier is proposed to implement and driver a Disc-Like MEMS oscillator using TSMC 0.18 μm CMOS technology. Aiming at Disc-Like MEMS oscillators having a parasitic capacitance of 0.5 pF

a low-power broadband current pre-amplifier combined with a current-to-voltage conversion stage and an inverter based wideband Cherry-Hooper amplifier are used to realize the good tradeoff between gain

bandwidth

noise

lower power voltage and dynamic range.Spectre simulation indicate: the single-end transimpedance gain is 115 dBΩ

the -3 dB bandwidth is beyond 500 MHz

the average input equivalent noise current is 25 pA/

and the power dissipation is only 17.6 mW

The die size (including all the PADs) is as small as 620 μm×620 μm.

关键词

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references

Li M H. A 1.57mW 99 dBΩ CMOS transimpedance amplifier for VHF micromechanical reference oscillators[C]// IEEE International Symposium on Circuits % Systems. Korea, Seoul, 2012: 209-212.

Wang Y, Raut R. A 2.4 GHz 82 dBΩ fully differential CMOS transimpedance amplifier for optical receiver based on wide-swing cascade topology[C]//Circuits % Systems iscas ieee International Symposium on. Japan, Kobe, 2005: 1601-1605.

Park S M, Yoo H. 1.25 Gb/s regulated cascode CMOS transimpedance amplifier for gigabit ethernet applications[J]. IEEE J. Solid State Circuits, 2004, 39(1): 112-121. DOI: 112

Lavasani H M. Low phase-noise UHF thin-film piezoelectric-on-substrate LBAR oscillators[C]//IEEE International Conference on Micro Electro Mechanical Systems. USA, Arizona, 2008: 1012-1015.

Lavasani H M, Pan W, Harrington B, et al. A 76 dBΩ 1.7 GHz 0.18μm CMOS tunable TIA using broadband pre-amplifier for high frequency lateral MEMS oscillators[J]. IEEE Journal of Solid State Circuits, 2011, 46(1): 224-235. DOI: 224

韩良, 张兴宝, 王新胜, 等. 跨阻放大器的带宽扩展技术[J]. 微电子学与计算机, 2008, 25(12): 41-44. DOI: 41

Lin Y, Lee S, Li S, et al. Series-resonant VHF micromechanical resonator reference oscillators[J]. IEEE Journal of Solid State Circuits, 2004, 39(12): 2477-2491. DOI: 2477

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