清华大学 微电子学研究所,北京,100084
纸质出版:2016
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满雪成, 乌力吉, 张向民. 动力电池检测芯片高压MUX电路设计[J]. 微电子学与计算机, 2016, 33(12): 47 51+56.
MAN Xue-cheng, WU Li-ji, ZHANG Xiang-min. Design of High Voltage Multiplexer for Battery Monitoring Chip[J]. 2016, 33(12): 4751.
设计了一个输入为8节串联电池单体的模拟高压MUX电路
可用于动力电池检测芯片电压采集前端.高压MUX电路的主体是互补DMOS器件及栅极驱动电路组成的高压开关阵列
消除了信号通路上由静态电流引入的误差.MUX电路输出与宽共模输入差分电压检测前端相连
避免使用电平移位电路
在减少功耗的同时
提高了电压检测精度.电路设计仿真结果表明
在0.5m 60VBCD工艺下
MUX电路工作电流30μA
无校准情况下由MUX电路引入的误差小于0.2mV.
A design of high voltage(HV)analog multiplexer(MUX)circuit has been presented.MUX circuit has voltage inputs of eight series connected battery cells
which is suitable for battery monitoring chip voltage detecting front-end.The main part of HV MUX is several parallel connected HV switches.A HV switch is composed of complementary DMOS devices and gate drive circuit
and has eliminated the error in the signal path caused by quiescent current.The MUX circuit drives a wide common mode range differential voltage detecting circuit.Elimination of level shifter circuit causes reduction in power consumption
and greatly improves the detecting accuracy.HV MUX has been designed under 0.5m 60 V BCD process.The simulation results show that the operating current of MUX circuit is 30μA
and the error introduced by the HV MUX circuit without calibration is less than 0.2mV.
Xing Y, Ma E W M, Tsui K L, et al. Battery Management Systems in Electric and Hybrid Vehicles[J]. Energies, 2011, 4(11): 1840-1857. DOI: 1840
De la Rosa, JoséM, et al. A CMOS 110-dB@40-kS/s programmable-gain chopper-stabilized third-order 2-1cascade sigma-delta Modulator for low-power high-linearity automotive sensor ASICs[J]. Solid-State Circuits, IEEE Journal of, 2005, 40(11): 2246-2264. DOI: 2246
Chen C L, Hu Y, Luo W, et al. A high voltage analog multiplexer with digital calibration for battery management systems[C]//IC Design % amp; amp; Technology(ICICDT), 2012IEEE International Conference on. Washington, DC, USA: IEEE, 2012: 1-4.
Xu L, Gonen B, Fan Q, et al. 5.2 A 110dB SNR ADC with±30Vinput common-mode range and 8μV Offset for current sensing applications[C]//SolidState Circuits Conference-(ISSCC), 2015IEEE International. Msnsfield, Texas, USA: IEEE, 2015: 1-3.
Park I Y, Choi Y K, Ko K Y, et al. BD180-a new 0.18μm BCD(Bipolar-CMOS-DMOS)Technology from7Vto 60V[C]//Power Semiconductor Devices and IC's, 2008. ISPSD'08.20th International Symposium on. [s. l. ]: IEEE, 2008: 64-67.
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