1. 南开大学 电子信息与光学工程学院,天津,300071
2. 中国科学院 机构 微电子研究所,北京,100029
纸质出版:2017
移动端阅览
张龙, 来强涛, 刘生有, 郭桂良, 戴宇杰. 一种全负载稳定的高PSRR LDO的设计[J]. 微电子学与计算机, 2017, 34(2): 58-62.
ZHANG Long, LAI Qiang-tao, LIU Sheng-you, et al. Design of a Full Load Stability High-PSRR Low Dropout Regulator[J]. 2017, 34(2): 58-62.
提出了一种高电源纹波抑制比的低压差线性稳压器.该低压差线性稳压器通过提高带隙基准的电源抑制比以达到提高LDO(低压差线性稳压器)低频电源纹波抑制的能力.在TSMC 0.18μm CMOS工艺下进行了仿真验证
仿真结果表明
该LDO最大负载电流可以达到80 mA
当负载电流在0~80 mA范围内变化时
开环相位裕度均大于64°
证明了低压差线性稳压器的高稳定性.当负载电流从0 mA跳变到80 mA时
系统的输出电压过冲仅为15 mV
环路响应时间仅为0.5 μs.当负载电流为80 mA
测得10 kHz时的电源纹波抑制比为-60.82 dB
100 kHz时LDO的电源纹波抑制比为-57.66 dB.
An improved power supply ripple rejection (PSRR) low drop-out (LDO) voltage regulator circuit is proposed. The LDO improves the ability of power supply ripple rejection ratio by improving power supply rejection ratio of the bandgap reference. This approach is tested in TSMC 0.18 μm COMS process. The results show that the maximum load current is 80 mA
and the open-loop phase margin is not less than 64° at a load current from 0 to 80 mA which proves the high stability of LDO. In addition
the circuit achieves a transient response with 15 mV voltage variation and 0.5 μs settling time for an 80 mA load step. The PSRR at 10 kHz is -60.82 dB and 100kHz is 57.66 dB.
Heng S, Pham C K. A low-power high-PSRR low-dropout regulator with bulk-gate controlled circuit[J]. IEEE Trans Circ Syst, 2010, 57(4): 868-873. DOI: 868
Hoon S, Chen J, Maloberti F, et al. An improved bandgap reference with high power rejection[J]. IEEE Int. Symp. Circuits and Systems (ISCAS), 2002, 5(6): 833-836. DOI: 833
EL-Nozahim, Amer A, Torres J, et al. High PSR low drop-out regulator with feed-forward ripple cancellation technique[J]. IEEE Journal of Solid-state Circuits, 2010, 45 (3): 565-577. DOI: 565
Gupta V, Rincon M G. A 5 mA 0.6 μm CMOS Miller compensated LDO regulator with -27dB worst-case power-supply rejection using 60 pF of on-chip capacitance[C]// IEEE International Solid-state Circuits Conference (ISSCC). San Francisco, CA, USA: IEEE Press, 2007: 520-521.
杨洁, 曾云. 一种快速瞬态响应的无片外电容LDO的设计[J]. 微电子学与计算机, 2012, 29(8): 124-126. DOI: 124
吴勤, 李巍, 李宁, 等. 一种提高电源抑制率的线性稳压器设计[J]. 微电子学与计算机, 2012, 29(6): 735-739. DOI: 735
0
浏览量
68
下载量
0
CSCD
关联资源
相关文章
相关作者
相关机构
京公网安备11010602201714号