基于SOI-0.18 μm高PAE CMOS Class-E功率放大器

郑岩; 李志强; 刘昱; 黄水龙; 张海英

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基于SOI-0.18 μm高PAE CMOS Class-E功率放大器

更新时间：2026-09-04

- 基于SOI-0.18 μm高PAE CMOS Class-E功率放大器
- A High PAE Class-E Power Amplifier Based on SOI-0.18 μm Process
- 微电子学与计算机 2017年34卷第2期页码：63-67
- 作者机构：
  
  1. 中国科学院机构微电子研究所,北京,100029
  2. 新一代通信射频芯片技术北京市重点实验室,北京,100029
  3. 中国科学院大学机构,北京,101408
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目 61404166
- DOI：
  中图分类号：
- 纸质出版：2017
- 稿件说明：
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郑岩, 李志强, 刘昱, 黄水龙, 张海英. 基于SOI-0.18 μm高PAE CMOS Class-E功率放大器[J]. 微电子学与计算机, 2017, 34(2): 63-67.

ZHENG Yan, LI Zhi-qiang, LIU Yu, et al. A High PAE Class-E Power Amplifier Based on SOI-0.18 μm Process[J]. 2017, 34(2): 63-67.
郑岩, 李志强, 刘昱, 黄水龙, 张海英. 基于SOI-0.18 μm高PAE CMOS Class-E功率放大器[J]. 微电子学与计算机, 2017, 34(2): 63-67. DOI：

ZHENG Yan, LI Zhi-qiang, LIU Yu, et al. A High PAE Class-E Power Amplifier Based on SOI-0.18 μm Process[J]. 2017, 34(2): 63-67. DOI：

摘要

基于IBM SOI-0.18 μm CMOS工艺

实现了高PAE的Class-E功率放大器.此放大器由两级构成.在输出级采用了负电容技术

抵消寄生电容

提高效率.输出级的共栅管采用自偏置

防止晶体管被击穿.驱动级采用Class-E结构

使得输出级能更好地实现开与关.两级之间使用了改善输出级电压和电流交叠的网络.通过使用这些技术

在2.8 V电源电压下

功率放大器工作在2.4 GHz的时候

输出功率为23.44 dBm

PAE为58.99%.

Abstract

Based on IBM SOI-0.18 μm CMOS process

a high PAE Class-E power amplifier is proposed. This power amplifier is composed of two stages. A negative capacitance is used at output stage in order to offset parasitic capacitance and improve efficiency. The common-gate transistor of output stage adopts self-biased technique which prevents the transistor from being broken down. Driver stage consists of Class-E

which turns the transistor of output stage on and off more efficiently. The network is used to improve overlap of current and voltage of output stage. By employing these techniques

the power amplifier can deliver 23.44 dBm output power at 2.4 GHz with 58.99% power added efficiency at 2.8-v supply.

关键词

Keywords

references

Sokal N O, Sokal A D. Class E-A new class of high-efficiency tuned single-ended switching power amplifiers[J]. IEEE Journal of Solid-State Circuits, 1975, 10(3): 168 -176. DOI: 168

Mazzanti A, Larcher L, Brama R, et al. Analysis of reliability and power efficiency in cascode class-E PAs[J] IEEE Journal of Solid-State Circuits, 2006, 41(5): 1222 -1229. DOI: 1222

Yoo C, Huang Q. A common-gate switched 0.9-W c1ass-E power amplifier with 41 % P AE in 0.25-pm CMOS[J]. IEEE Journal of Solid-State Circuits, 2001, 36(5): 823-8301. DOI: 823

Manikandan P, Mathew R. Design of CMOS class-E power amplifier for WLAN and Bluetooth applications[C]//IEEE ICDCS 2012. Macau: IEEE, 2012: 81-88.

Santana D B, Klimach H, Fabris E, et al. CMOS RF class-E power amplifier with power control[C]//2016 IEEE 7th LASCAS. Bariloche: IEEE, 2016: 371-374.

Xu X, Sun Z, Xu K Y, et al. A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communication in 180-nm CMOS[C]// 2014 IEEE International Symposium on Radio-Frequency Integration Technology. Hefei: IEEE, 2014: 1-3.

Zulinski R E, Steadman J W. Class-E power amplifiers and frequency multipliers with finite dc feed inductance[J]. IEEE Trancation Circuits System, 1987, CAS-34(9): 1074-1087. DOI: 1074

Cai J Y, Li Z Q. A 1-V, 800-MHz CMOS class-E power amplifier with power control for wireless sensor network[C]//IEEE WCSP 2013. Hangzhou: IEEE, 2013: 1-4.

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