MTM非晶硅反熔丝导通电阻

马金龙; 吴素贞

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MTM非晶硅反熔丝导通电阻

更新时间：2026-09-04

- MTM非晶硅反熔丝导通电阻
- On-state Resistance of MTM Amorphous Silicon Antifuse
- 微电子学与计算机 2016年33卷第9期页码：98-100
- 作者机构：
  
  中国电子科技集团公司第五十八研究所,江苏,无锡,214035
- 作者简介：
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- 纸质出版：2016
- 稿件说明：
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马金龙, 吴素贞. MTM非晶硅反熔丝导通电阻[J]. 微电子学与计算机, 2016, 33(9): 98-100,105.

MA Jin-long, WU Su-zhen. On-state Resistance of MTM Amorphous Silicon Antifuse[J]. 2016, 33(9): 98-100.
马金龙, 吴素贞. MTM非晶硅反熔丝导通电阻[J]. 微电子学与计算机, 2016, 33(9): 98-100,105. DOI：

MA Jin-long, WU Su-zhen. On-state Resistance of MTM Amorphous Silicon Antifuse[J]. 2016, 33(9): 98-100. DOI：

摘要

分析了现场可编程门阵列(FPGA)和可编程存储器(PROM)中广泛使用的MTM(metal-to-metal)反熔丝结构

测量了决定FPGA和PROM传输延迟的反熔丝编程后导通电阻

给出了编程电流对导通电阻的决定规律.结合MTM非晶硅反熔丝的特征电压模型

确定了TiN/-Si/TiN结构反熔丝的特征电压值.对大量样品的实际测量结果

并且对实验数据进行拟合

实验结果表明

实验特征电压值接近模型理论值

可通过控制编程电流对编程后电阻的进行调控.

Abstract

The structure of MTM(metal-to-metal)amorphous silicon antifuse which has been extensively used in FPGA and PROM product is introduced.On-state resistances which determine the delay of FPGA and PROM have been measured

and the fact that the on-state resistance is inversely proportional to the programming current has been present.The electro thermal model used to predict programmed resistance of TiN/-Si/TiN MTM antifuse was derived

and the characteristic voltage of MTM antifuse was measured.The experimental results show that the experimental fitting value is in accordance with the theoretical value

and their on-state resistance can be controlled by choosing aprogramming current level.

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references

Zhang G, C Hu C, Yu PY, et al. An electro-thermal model for metal-oxide-metal antifuses[J]. Electron Devices IEEE Transactions on, 1995, 42(8): 1548-1558. DOI: 1548

New York Kittel Z. Introduction to solid state physics[M]. New York: Wiley, 1986.

Zhang G, Hu C, Yu PY, et al. Characteristic voltage of programmed metal-to-metal antifuses[J]. IEEE Electron Device Letters, 1994, 15(5): 166-168. DOI: 166

Wong R, Gordon K. Reliability mechanism of the unprogrammed amorphous silicon antifuse[C]//Proceedings of the 32nd Annual IEEE International Relialility Physics Symposium. San Jose, CA, USA: IEEE, 1994: 378-382.

Zhang G, King Y, Elfoukhy S, et al. On-state reliability of amorphous silicon antifuses[C]//IEDM: International Electron Devices Meeting. Washington, DC: IEEE, 1995: 551-554.

Liu D, Chen K, Tigelaar H, et al. Scaled dielectric antifuse structure for field programmable gate array applications[J]. IEEE Electron Device Letters, 1991, 12(4): 151-153. DOI: 151

Cohen SS, Raffel JJ, Wyatt PW. A novel double-metal structure for voltage-programmable links[J]. IEEE Electron Device Letters, 1992, 13(9): 488-490. DOI: 488

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