TSV封装中阻抗不连续差分互连结构宽频寄生参数建模研究

孟真; 刘谋; 张兴成; 郭希涛; 阎跃鹏

Chinese

您当前的位置：

首页 >

文章列表页 >

TSV封装中阻抗不连续差分互连结构宽频寄生参数建模研究

更新时间：2026-09-04

- TSV封装中阻抗不连续差分互连结构宽频寄生参数建模研究
- Broadband Parasitic Parameters Modeling of Impedance Discontinuous Differential Pair Interconnect Structure in the TSV Package
- 微电子学与计算机 2017年34卷第8期页码：6-11
- 作者机构：
  
  中国科学院机构微电子研究所,北京,100029
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目 61306135
- DOI：
  中图分类号：
- 纸质出版：2017
- 稿件说明：
移动端阅览
孟真, 刘谋, 张兴成, 郭希涛, 阎跃鹏. TSV封装中阻抗不连续差分互连结构宽频寄生参数建模研究[J]. 微电子学与计算机, 2017, 34(8): 6-11, 16.

MENG Zhen, LIU Mou, ZHANG Xing-cheng, et al. Broadband Parasitic Parameters Modeling of Impedance Discontinuous Differential Pair Interconnect Structure in the TSV Package[J]. 2017, 34(8): 6-11.
孟真, 刘谋, 张兴成, 郭希涛, 阎跃鹏. TSV封装中阻抗不连续差分互连结构宽频寄生参数建模研究[J]. 微电子学与计算机, 2017, 34(8): 6-11, 16. DOI：

MENG Zhen, LIU Mou, ZHANG Xing-cheng, et al. Broadband Parasitic Parameters Modeling of Impedance Discontinuous Differential Pair Interconnect Structure in the TSV Package[J]. 2017, 34(8): 6-11. DOI：

摘要

为了研究TSV封装内除差分对硅通孔外在硅基片的层间和层下存在的微凸点、平面互连线、倒装焊球等互连结构对差分信号传输特性的影响，提出了一种改进型的适用于描述TSV封装内"串连型差分互连阻抗"的差分对硅通孔结构的RLCG电路模型，进而提出了一种采用"阻抗不连续系数"来描述串行连接的微凸点、平面互连线、倒装焊球等结构的"串连式阻抗不连续结构"RLCG电路模型.在此基础之上，采用HFSS三维全波仿真方法对TSV封装中的硅通孔、微凸点、平面互连线、倒装焊球等差分对互连结构的各种串行连接方式进行了三维电磁场建模和分析.将RLCG模型的差模正向传输系数与HFSS模型的分析结果进行了对比，对比结果证明在0.1~30 GHz特别是3~25 GHz宽频段内本文提出的上述2种RLCG电路模型能够较为准确的描述出差分互连结构的差模信号宽频传输特性.

Abstract

In order to research the influence on the differential transmission characteristics caused by micro-bump

planar interconnector

flip-chip solder ball and other interconnect structures except for the through silicon via in the TSV package

an improved RLCG circuit model of the differential TSV

which is suitable for describing the "impedance of the differential interconnect structures connected in series" is proposed. Then

a RLCG circuit model of the "impedance discontinuity structure connected in series" which is suitable to describe the micro-bump

planar interconnector

flip-chip solder ball and other interconnect structures used "impedance discontinuity coefficient" is proposed. On this basis

3D full wave simulation method of HFSS is used to simulate the structure made up of the micro-bump

planar interconnector

flip-chip solder ball and other interconnect structures connected in series. The differential mode forward transmission coefficient of the RLCG model and HFSS model are analyzed and compared. The results show that two RLCG models proposed above can describe the wideband transmission characteristics of differential mode signals accurately in the 0.1~30 GHz

especially in the 3~25 GHz wave band.

关键词

Keywords

references

Guruprasad Katti, Kristin De Meyer, Wim Dehaene. Electrical modeling and characterization of through silicon via for three-dimensional ICs[J]. IEEE Transactions on electron devices, 2010, 57(1): 256-262. DOI: 256

Nanju Na. Discontinuity impacts and design considerations of high speed differential signals in FC-PBGA packages with high wiring density electrical performance of electronic packaging[C] //IEEE 14th Topical Meeting on Electrical Performance of Electronic Packaging, 2005. [s. l. ], IEEE, 2005: 107-110.

Wang Chuende, Lu Yichang, Chen Pengshu, et al. ABF-Based TSV arrays with improved signal integrity on 3-D IC/interposers: equivalent models and experiments[J]. IEEE Transactions on components, packaging and manufacturing technology, 2013, 3(10): 1744-1753. DOI: 1744

Hui Min Lee, Samudra GS, Er-Ping Li. Power integrity modeling, measurement and analysis of seven-chip stack for TSV-based 3D IC integration[C] //APEMC 2015. Taiwan, China, 2015: 689-692.

Eisenstadt R. Combined differential and common-mode scattering parameters: theory and simulation[J]. IEEE. Trahs. Microw. Theory Tech, 1995, 43(7): 1530-1539. DOI: 1530

Chuan Xu, Roberto Suaya, Kaustav Banerjee. Compact AC modeling and performance analysis of through-silicon vias in 3 D ICs[J]. IEEE Transactions on electron devices, 2010, 57(12): 3405-3416. DOI: 3405

Fan W, Wai L. Mixed-mode s-parameter characterization of differential structures[C] // Proceedings of the 5th Electronics Packaging Technology Conference (EPTC 2003). Singapore, 2003: 533-537.

Lei Liang, Min Miao, Shufang Xu, et al. 3D modeling and electrical characteristics of through-silicon-via (TSV) in 3D integrated circuits[C] // 2011 International Conference on Electronic Packaging Technology % High DensityPackaging. Beijing, China, 2011: 471-475.

Eisenstadt R. Pure-mode network analyzer for on-wafer measurements of mixed-mode S-parameters of differential circuits[J]. IEEE. Trahs. Microw. Theory Tech, 1997, 45(7): 1071-1077. DOI: 1071

Bockelman D E. The theory, measurement, and application of scattering parameters with multiple modes of propagation[D]. Gainesville, University Florida, 1997.

Eisenstadt DEBaWR. Combined differential and common-modeanalysis of power sputters and combiners[J]. IEEE. Trahs. Microw. Theory Tech, 1995, 43(11): 2627-2632. DOI: 2627

Jin Hu, Lifeng Jin, Hao Zheng. Electrical modeling and characterization of through silicon vias (TSV)[J]. IEEE, 2012, 2(11): 1-4. DOI: 1

Biancun Xie, Kijin Han, Jianyong Xie. Coupling analysis of through-silicon via (TSV) arrays in silicon interposers for 3d systems[J]. IEEE International Symposium on Electromagnetic Compatibility, 2011, 53(1): 16-21. DOI: 16

Joohee Kim. Signal integrity modeling and measurement of TSV in 3D IC[C]//Design Automation Conference, 2013. [S. L], IEEE, 2013: 13-16.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

一种基于特征上下文理解与切片分析的肺结核检测算法

基于改进RT-DETR的航拍小目标检测算法

超低功耗实时时钟电路的设计

基于多尺度融合与小目标增强的航拍车辆检测算法

基于反向体偏置的高增益稳定性高温运放设计