高性能X波段增强型凹栅AlO/AlGaN/GaN MIS-HEMT

张蓉; 马晓华; 罗卫军; 刘辉; 孙朋朋; 耿苗

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高性能X波段增强型凹栅AlO/AlGaN/GaN MIS-HEMT

更新时间：2026-09-04

- 高性能X波段增强型凹栅AlO/AlGaN/GaN MIS-HEMT
- High Performance Enhancement-Mode Gate-Recessed Al
- 微电子学与计算机 2017年34卷第11期页码：94-98
- 作者机构：
  
  1. 西安电子科技大学先进材料与纳米科技学院,陕西,西安,710071
  2. 中国科学院机构微电子研究所,北京,100029
  3. 中国科学院大学机构,北京,101408
- 作者简介：
- 基金信息：
  
  国家自然科学基金 61334002
- DOI：
  中图分类号：
- 纸质出版：2017
- 稿件说明：
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张蓉, 马晓华, 罗卫军, 刘辉, 孙朋朋, 耿苗. 高性能X波段增强型凹栅AlO/AlGaN/GaN MIS-HEMT[J]. 微电子学与计算机, 2017, 34(11): 94-98.

ZHANG Rong, MA Xiao-hua, LUO Wei-jun, et al. High Performance Enhancement-Mode Gate-Recessed Al[J]. 2017, 34(11): 94-98.
张蓉, 马晓华, 罗卫军, 刘辉, 孙朋朋, 耿苗. 高性能X波段增强型凹栅AlO/AlGaN/GaN MIS-HEMT[J]. 微电子学与计算机, 2017, 34(11): 94-98. DOI：

ZHANG Rong, MA Xiao-hua, LUO Wei-jun, et al. High Performance Enhancement-Mode Gate-Recessed Al[J]. 2017, 34(11): 94-98. DOI：

摘要

在蓝宝石衬底上制备了栅长为0.25 m的增强型AlO/AlGaN/GaN MIS-HEMTs

采用刻蚀凹栅与ALD(原子层淀积)AlO介质层的方法研制器件.研制的增强型MIS-HEMT器件的阈值电压为+2.2 V

饱和电流为512.3 mA/mm.通过变频变温C-V方法测试提取的AlO介质层与AlGaN势垒层之间的界面态密度相应于能级范围(-0.35)eV~(-0.65)eV从8.50×10 cmeV减小到9.73×10 cmeV.另外

研制器件展示了突出的射频性能

其截止频率())为30.5 GHz

最高振荡频率()为71.5 GHz.连续波测试模式时

该器件在8 GHz频率下

饱和输出功率密度为1.7 W/mm

相应附加功率效率为32.6%.展现出凹栅增强型MIS-HEMT在X波段射频电路中的应用潜力.

Abstract

In this letter

enhancement-mode (E-mode) AlO/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with a gate-length (L) of 0.25 m are fabricated using gate recess and ALD-AlO process on a sapphire substrate. The fabricated E-mode MIS-HEMTs exhibit a threshold voltage of +2.2 V and a saturation drain current of 512.3 mA/mm at V=8 V. The interface trap state density (D) extracted by frequency/temperature-dependent capacitance-voltage (C-V) measurement between AlO and AlGaN decreases from 8.50×10 cmeV at the energy of (-0.35) eV to 9.73×10 cmeV at (-0.65) eV. In addition

the fabricated devices show excellent RF performance which consists of a cut-off frequency () of 30.5 GHz and a maximum oscillation frequency () of 71.5 GHz. Large-signal power measurements at 8 GHz reveal a maximum saturated output power density of 1.7 W/mm with a corresponding PAE of 32.6% in continuous-wave mode. These results showed the gate-recessed E-mode MIS-HEMTs are candidates for X-band applications.

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Keywords

references

Yang S, Tang Z K, Wong K-Y et al. Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-Heterostructures using frequency- and temperature-dependent C-V techniques[C]//IEEE Int. Electron Devices Meeting, IEEE, 2013: 152.

Shinohara. K, Regan D, Corrion A et al. Deeply-scaled E/D-Mode GaN-HEMTs for sub-mm-Waveamplifiers and mixed-Signal applications[C]// IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2012.

Feng Z H, Zhou R, Xie S Y et al. 18-GHz 3.65-W/mm enhancement-mode AlGaN/GaN HFET using fluorine plasma Ion implantation[J]. IEEE Electron Dev. Lett., 2010, 31(12): 1386. DOI: 1386

Mizue C, Hori Y J, Marcin M, et al. Capacitance-voltage characteristics of Al2O3/AlGaN/GaN structures and state density distribution at Al2O3/AlGaNinterface[J]. J. J. Appl. Phys, 2011, 50 (2) : 021001-021001-7. DOI: 021001

Yang S, Liu S H, Lu Y Y et al. AC-Capacitance techniques for interface trap analysis in GaN-Based Buried-Channel MIS-HEMTs[J]. IEEE Trans. Electron Dev. 2015, 62(6): 1870. DOI: 1870

Huang S, Liu X Y, Zhang J H, et al. High RF performance enhancement-mode Al2O3/AlGaN/GaN MIS-HEMTs fabricated with high-temperature gate-recess technique[J]. IEEE Electron Dev. Lett. 2015, 36(8): 754. DOI: 754

Yang S, Liu S H, Liu C et al. Thermally induced threshold voltage instability of Ⅲ-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes[C]//IEEE Int. Electron Devices Meeting. IEEE, 2014: 434.

Albrecht J D, Kane A, Chang T-H, DARPA's microscale power conversion program[C]// IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2012.

Maroldt S, Haupt C, Pletschen W et al. Gate-Recessed AlGaN/GaN based Enhancement-Mode high electron mobility transistors for high frequency operation[J]. J. J. Appl. Phys., 2009, 48: 04C083-1. DOI: 04C083-1

Kuraguchi M, Takada Y, Suzuki T, et al. Normally-off GaN-MISFET with well-controlled threshold voltage[J]. Phys. Stat. Sol. (a), 2007, 204(6): 2010-2013. DOI: 2010

Mishra U K, Shen L, Kazior T E. GaN-Based RF power devices and amplifiers[J]. Proceedings of the IEEE, 2008, 96 (2) : 287-305. DOI: 287

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