辐射环境下CMOS图像传感器的暗电流幅值分布预测方法

郑然; 刘超; 刘晗; 惠祥力

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辐射环境下CMOS图像传感器的暗电流幅值分布预测方法

更新时间：2026-09-04

- 辐射环境下CMOS图像传感器的暗电流幅值分布预测方法
- Methods for Prediction Dark-Current Distribution of CMOS Image Sensor in Radiation Environment
- 微电子学与计算机 2018年35卷第4期页码：144-148
- 作者机构：
  
  西北工业大学计算机学院,陕西,西安,710072
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目 61306128陕西省自然科学基金项目 2017JM6084
- DOI：
  中图分类号：
- 纸质出版：2018
- 稿件说明：
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郑然, 刘超, 刘晗, 惠祥力. 辐射环境下CMOS图像传感器的暗电流幅值分布预测方法[J]. 微电子学与计算机, 2018, 35(4): 144-148.

ZHENG Ran, LIU Chao, LIU Han, et al. Methods for Prediction Dark-Current Distribution of CMOS Image Sensor in Radiation Environment[J]. 2018, 35(4): 144-148.
郑然, 刘超, 刘晗, 惠祥力. 辐射环境下CMOS图像传感器的暗电流幅值分布预测方法[J]. 微电子学与计算机, 2018, 35(4): 144-148. DOI：

ZHENG Ran, LIU Chao, LIU Han, et al. Methods for Prediction Dark-Current Distribution of CMOS Image Sensor in Radiation Environment[J]. 2018, 35(4): 144-148. DOI：

摘要

在空间卫星系统中

CMOS图像传感器也成为了首选的成像器件.然而

空间中存在的各种辐射粒子所引起的辐射效应

会使CMOS图像传感器暗电流均值增加、不一致性增强

导致图像信噪比降低

影响成像质量.基于半导体器件的辐射效应原理

分析了射线和质子辐射对CMOS图像传感器的总剂量和位移损伤效应

提出了一种混合辐射环境下暗电流分布建模方法.仿真结果表明

提出的方法能够准确预测射线和质子混合辐射环境下CMOS图像传感器的暗电流幅值分布情况.

Abstract

Nowadays

CMOS image sensors are more and more used in a wide variety of applications

especially in satellite systems

where they are exposed to space radiation environment. In-orbit sensors suffer from radiation induced dark-current degradation that the dark-current mean value and non-uniformity increase

which results in the signal-to-noise-ratio decrease affecting the image quality. Based on the principle of radiation effects on semiconductor devices

this paper analyzes the ionizing and displacement damage effects in CMOS image sensors due to -rays and protons radiation

and proposes a method for dark-current distribution modeling in the mixed radiation environment. Simulation results proves that the proposed method is well adapted to predict the dark-current distributions for a device which is exposed to both rays and protons radiation at the same time.

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Keywords

references

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