西安电子科技大学 CAD电路研究所,陕西,西安,710071
纸质出版:2018
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康瑞, 代国定, 李沉沉, 刘帅. 基于反嵌套共源共栅米勒补偿的LDO设计[J]. 微电子学与计算机, 2018, 35(11): 20-23.
KANG Rui, DAI Guo-ding, LI Chen-chen, et al. A Capacitor-free Low-dropout Regulator Based on Reversed Nested Cascode Miller Compensation[J]. 2018, 35(11): 20-23.
基于反嵌套式共源共栅米勒补偿提出了单极点系统的无电容型LDO线性稳压器.该稳压器采用由反相增益级和反相可变增益级组成的可变增益缓冲器
可提高LDO的压摆率和负载瞬态变化时的稳定性.基于TSMC 0.25 m CMOS工艺
设计了一款2.5 V 200 mA的适合SoC应用的无电容型LDO
仿真结果表明其漏失电压为150 mV
在1 mA到200 mA的负载电流范围内
该LDO在输出电容为0~1 F的范围内都能稳定
负载电流为200 mA时
环路的最大相位裕度可达86°
最小相位裕度高达76°.
Based on reversed nested cascade miller compensation(RNCMC)
a single pole system of capacitor-free low-dropout regulator is presented. The LDO adopts a variable-gain-buffer that consists of an inverting stage and a variable gain inverting stage to improve the slew rate and the stability of load stepping. A 2.5 V 200 mA capacitor-free LDO for SoC application is targeted by TSMC 0.25 m CMOS process in this paper. Simulation results shows that the dropout voltage is 150 mV
the LDOs load current is from 1 mA to 200 mA and the LDO can be stable in the range of 0 to 1 F for output capacitance
the maximum phase margin is up to 86 degrees and the minimum is 76 degrees when the load is at 200 mA.
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邹志革, 杨诗洋, 邹雪城.基于阻尼系数控制频率补偿的无电容型LDO设计[J].微电子学与计机, 2009, 26(7):49-53. DOI: 49
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