基于GaAs工艺的超宽带混合集成功率放大器

胡俊; 陈晓娟

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基于GaAs工艺的超宽带混合集成功率放大器

更新时间：2026-09-04

- 基于GaAs工艺的超宽带混合集成功率放大器
- Ultra-High Bandwidth Hybrid Integrated Power Amplifier Based on GaAs Technology
- 微电子学与计算机 2018年35卷第12期页码：59-63
- 作者机构：
  
  1. 中国科学院机构微电子研究所,北京,100029
  2. 中国科学院大学机构,北京,101408
- 作者简介：
- 基金信息：
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  中图分类号：
- 纸质出版：2018
- 稿件说明：
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胡俊, 陈晓娟. 基于GaAs工艺的超宽带混合集成功率放大器[J]. 微电子学与计算机, 2018, 35(12): 59-63.

HU Jun, CHEN Xiao-juan. Ultra-High Bandwidth Hybrid Integrated Power Amplifier Based on GaAs Technology[J]. 2018, 35(12): 59-63.
胡俊, 陈晓娟. 基于GaAs工艺的超宽带混合集成功率放大器[J]. 微电子学与计算机, 2018, 35(12): 59-63. DOI：

HU Jun, CHEN Xiao-juan. Ultra-High Bandwidth Hybrid Integrated Power Amplifier Based on GaAs Technology[J]. 2018, 35(12): 59-63. DOI：

摘要

基于0.15 μm GaAs PHEMT工艺

设计了一款可以应用于超高频(VHF)和甚高频(UHF)的超宽带功率放大器.该功放工作在AB类

由上下两条对称支路构成.输出电路采用T型结合成技术

在片外使用罗杰斯4350B高速印刷电路板(PCB)制作.最后在先进设计系统软件(ADS)里进行芯片和PCB板的联合仿真.仿真结果显示:此款功放的工作带宽是30 MHz~3 GHz

带宽超过6个倍频程.在整个频带内

小信号增益在21 dB±0.3 dB之间

输入输出回路损耗基本在-10 dB以下.连续波测量下

饱和输出功率在30.9 dBm±0.5 dB之间

功率附加效率(PAE)在17.7%~14.0%之间.

Abstract

An ultra-high bandwidth power amplifier (PA) was designed for very-high-frequency (VHF) and ultra-high frequency (UHF) applications based on 0.15 um GaAs PHEMT technology. The PA works in class AB

which consists of two symmetrical branches from top to bottom. The output circuit uses T-junction technology which uses the Rogers 4350B high-speed printed circuit board (PCB) in the off-chip. Finally

the chip and PCB have co-simulated in Advanced Design System (ADS). The simulation results show that the PA achieves an operating bandwidth of 30 MHz to 3 GHz whose bandwidth is more than 6 octaves. The small signal gain is over 21 dB±0.3 dB the whole bandwidth and the input and output return loss is generally less than -10 dB. Under continuous wave measurement

the saturated output power is 30.9 dBm±0.5 dB and the power added efficiency (PAE) is 17.7%-14.0%.

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references

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