采用碳纳米管改善GaN HEMT器件结构散热

张国斌; 赵妙; 吴宗刚

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采用碳纳米管改善GaN HEMT器件结构散热

更新时间：2026-09-04

- 采用碳纳米管改善GaN HEMT器件结构散热
- Improved Heat Dissipation in GaN HEMT with Carbon Nanotubes
- 微电子学与计算机 2018年35卷第12期页码：95-98
- 作者机构：
  
  1. 中国科学院机构微电子研究所,北京,100029
  2. 中国科学院大学机构,北京,101408
- 作者简介：
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- 纸质出版：2018
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张国斌, 赵妙, 吴宗刚. 采用碳纳米管改善GaN HEMT器件结构散热[J]. 微电子学与计算机, 2018, 35(12): 95-98.

ZHANG Guo-bin, ZHAO Miao, WU Zong-gang. Improved Heat Dissipation in GaN HEMT with Carbon Nanotubes[J]. 2018, 35(12): 95-98.
张国斌, 赵妙, 吴宗刚. 采用碳纳米管改善GaN HEMT器件结构散热[J]. 微电子学与计算机, 2018, 35(12): 95-98. DOI：

ZHANG Guo-bin, ZHAO Miao, WU Zong-gang. Improved Heat Dissipation in GaN HEMT with Carbon Nanotubes[J]. 2018, 35(12): 95-98. DOI：

摘要

自热效应是影响GaN HEMT器件特性的一个重要因素.本文我们对比研究了不同衬底的GaN HEMT器件传统封装、倒装结构的热特性

并采用高热导率的碳纳米管改善倒装器件散热.从仿真结果看

倒装结构对器件的散热能力有一定提升

而碳纳米管又增强了的倒装结构的散热能力.采用碳纳米管的倒装结构使得以蓝宝石

硅和碳化硅为衬底的器件总热阻分别降低了77.1%、50.6%、32.9%.因此

碳纳米管能够改善倒装结构的散热

并增强器件的特性和可靠性.

Abstract

Self-heating is a very severe factor for GaN HEMT performance. In this paper

we comparative study thermal characteristics of the conventional packaging and flip-chip GaN HEMT devices with various substrates and improve heat dissipation of the flip-chip devices by using carbon nanotubes with high thermal conductivity. From the results

flip-chip lower temperature of device

while the carbon nanotubes increase the heat dissipation of flip-chip. The thermal resistance of devices with sapphire

Si and SiC substrates decreased by 77.1%

50.6% and 32.9%

respectively

with carbon nanotubes. Therefore

carbon nanotubes can improve the heat dissipation of the flip-chip structure and enhance the performance and reliability of the device.

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references

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陈强, 黄永华, 王如竹.碳纳米管材料的热导率及其衡量新方法探究[J].科学通报, 2013(33):3403-3408. DOI: 3403

Shioya H, Iwai T, Kondo D, et al. Evaluation of Thermal Conductivity of a Multi-Walled Carbon Nanotube Using the ΔVgs Method[J]. Japanese Journal of Applied Physics, 2007, 46.

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