采用CMOS工艺的C波段5 bit数字移相器设计

张杰; 吴蓉; 徐进; 梁竞贤; 来龙坤; 罗卫军

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采用CMOS工艺的C波段5 bit数字移相器设计

更新时间：2026-09-04

- 采用CMOS工艺的C波段5 bit数字移相器设计
- Design of C-band 5 bit digital phase shifter based on CMOS technology
- 微电子学与计算机 2019年36卷第11期页码：55-59
- 作者机构：
  
  1. 兰州交通大学机构电子与信息工程学院,甘肃,兰州,730070
  2. 中国科学院机构微电子研究所,北京,100029
  3. 中国科学院大学机构,北京,101408
- 作者简介：
- 基金信息：
  
  甘肃省科技厅计划项目 18JR3RA123
- DOI：
  中图分类号：
- 纸质出版：2019
- 稿件说明：
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张杰, 吴蓉, 徐进, 梁竞贤, 来龙坤, 罗卫军. 采用CMOS工艺的C波段5 bit数字移相器设计[J]. 微电子学与计算机, 2019, 36(11): 55-59.

ZHANG Jie, WU Rong, XU Jin, et al. Design of C-band 5 bit digital phase shifter based on CMOS technology[J]. 2019, 36(11): 55-59.
张杰, 吴蓉, 徐进, 梁竞贤, 来龙坤, 罗卫军. 采用CMOS工艺的C波段5 bit数字移相器设计[J]. 微电子学与计算机, 2019, 36(11): 55-59. DOI：

ZHANG Jie, WU Rong, XU Jin, et al. Design of C-band 5 bit digital phase shifter based on CMOS technology[J]. 2019, 36(11): 55-59. DOI：

摘要

基于SMIC 0.13 μm CMOS工艺

采用片上巴伦、正交全通滤波器和吉尔伯特单元的设计方案

设计了一款C波段5 bit数字移相器.巴伦将单端输入信号分成两路反相的差分信号

并通过吉尔伯特单元将正交全通滤波器产生的正交信号进行矢量运算.在满足移相精度11.25°的条件下

实现4.5~7.5 GHz的工作带宽.电磁场仿真结果显示:在4.5~7.5 GHz频段

数字移相器插入损耗的典型值是-10 dB; 输入回波损耗和输出回波损耗分别优于-10.6 dB和-9.9 dB; RMS移相精度小于3.5°;芯片面积1.66 mm×0.74 mm; 该5 bit MMIC数字移相器相对带宽为50%

适用于5G低频段的通信系统中.

Abstract

Based on SMIC 0.13 m CMOS technology

a C-band 5 bit digital phase shifter was designed by using on-chip Barron

orthogonal all-pass filter and Gilbert cell. The balun divided the input signal at one end into two inverse differential signals

and then carried out vector operation on the quadrature signals generated by the quadrature all-pass filter through Gilbert cell. The bandwidth of 4.5~7.5 GHz was achieved when the phase-shifting accuracy was 11.25 degrees. The simulation results of electromagnetic field showed that the typical insertion loss of digital phase shifter was -10 dB at 4.5-7.5 GHz; the input and output return losses were better than 10.6 dB and -9.9 dB

respectively; the phase shifting accuracy of RMS was less than 3.5 degrees

the size of the layout was 1.66 mm x 0.74 mm; and the relative bandwidth of the 5 bit MMIC digital phase shifter was 50%

which was suitable for 5G low frequency communication system.

关键词

Keywords

references

陈阳.硅基CMOS毫米波开关混频器的研究与设计[D].成都: 电子科技大学, 2015.

YAN T C, LIN W Z, KUO C N. A 3.5 GHz phase shifter of high input power range with digitally controlled VGA[C]// 2011 IEEE International Symposium on Radio-Frequency Integration Technology. Beijing, China, 2011:

DIPANKAR M, PALASH R, DEBASIS D. A variable high gain and high dynamic range CMOS phase shifter for phased array beamforming applications[C]// 2016 IEEE International Conference on Electro Information Technology (EIT). Grand Forks, ND, USA, 2016:

CHEN LIANG, CHEN XINYU, ZHANG YOUTAO. A high linearity X-band SO1 CMOS digitally-controlled phase shifter[J]. Journal of Semiconductors, 2015, 36(6): 115-122. DOI: 115

孙朋朋, 刘辉, 耿苗, 等. X波段4bit MMIC数字移相器的设计与实现[J].半导体技术, 2017, 42(6): 431-435. DOI: 431

段宗明, 马强, 王晓东, 等. 200-800MHz 6-Bit CMOS有源移相器设计[J].中国集成电路, 2015, 24(10): 37-42. DOI: 37

BORIS M, NATHALIE D, ERIC K, et, al. A 60 GHz reconfigurable active phase shifter based on a vector-modulator in 65nm CMOS technology[J]. International Journal of Microwave % Wireless Technologies, 2016, 8(3): 399-404. DOI: 399

WOORIM S, REBEIZ G M. 60 GHz active phase shifter using an optimized quadrature all-pass network in 45nm CMOS[C] // IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium. Montreal, Quebec, 2012.

LUO WEIJUN, LIU HUI, ZHANG ZONGJING, et al. High-Power X-Band 5-b GaN phase shifter with monolithic integrated E/D HEMTs control logic[J]. IEEE Transactions on Electron Devices, 2017(99): 1-7. DOI: 1

CHEN YANG. A wideband photonic microwave phase shifter with 360-degree phase tunable range based on a DP-QPSK modulator[J]. Optics Communications, 2018(410): 787-792. DOI: 787

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