1. 上海交通大学 电子信息与电气工程学院,上海,200240
2. 中芯国际集成电路制造有限公司,上海,201203
纸质出版:2019
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杨丽婷, 王琴, 倪昊, 赵子鉴. pFlash故障测试算法[J]. 微电子学与计算机, 2019, 36(9): 55-60.
YANG Li-ting, WANG Qin, NI Hao, et al. Fault test algorithm based on pFlash[J]. 2019, 36(9): 55-60.
Flash存储器快速发展得益于便携式设备的进步
而pFlash存储器因编程电压低、功耗小并可以有效抑制带-带隧道效应而被广泛应用.由于可靠性和成本是衡量所有存储器设备性能的两个关键指标
本文提出了一种高效的pFlash故障测试算法来减小存储器的测试成本并保证其故障覆盖率.通过改变写入的测试向量以及写入的方式来准确定位pFlash存储器的故障.测试效率较于March-like算法提高了33%
且故障覆盖率仍然为100%.此算法用于开发pFlash内建自测试电路(BIST
Built-in Self Test)可以适当减少其硬件开销
用于测试机台可以减少测试时间.
Flash memory rapidly development benefits from the progress of portable devices
while pFlash has been widely used due to the low programming voltage
low power consumption and the ability to effectively suppress the band-to-band tunneling effect. Since reliability and cost are two key indicators to measure the performance of all memory and guarantee its fault coverage. The algorithm can locate pFlash fault by changing the test vectors and write mode. Compared with March-like algorithm
the test efficiency is improved by 33% and the fault coverage is still 100%. This algorithm is used to develop pFlash Built-in Self Test circuit (BIST)
which can reduce its hardware overhead and reduce test time for the test machine.
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